Strain metrology of devices by dark-field electron holography: A new technique for mapping 2D Strain distributions

Technical Digest - International Electron Devices Meeting, IEDM

Volumn , Issue , 2009, Pages

  Hÿtch, Martin ^a   Hüe, Florian ^a,b   Houdellier, Florent ^a   Snoeck, Etienne ^a   Claverie, Alain ^a  

^a CEMES CNRS   (France)

^b UNIVERSITY OF CAMBRIDGE   (United Kingdom)

Author keywords

[No Author keywords available]

Indexed keywords

2D STRAIN; DARK-FIELD; INDUCED STRESS; INHOMOGENEOUS DISTRIBUTION; LATTICE ROTATIONS; MAP STRAIN; STRAIN COMPONENTS; STRAIN DISTRIBUTIONS; STRAIN METROLOGY;

ELECTRON DEVICES; ELECTRON HOLOGRAPHY; ROTATION;

STRAIN;

EID: 77952398752     PISSN: 01631918     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/IEDM.2009.5424424     Document Type: Conference Paper

References (8)

1. B. Foran, M.H. Clark, G. Lian, Future Fab Intl 20, 127-129 (2006).
2. M.J. Hÿtch, F. Houdellier, F. Hüe, E. Snoeck, Nature 453,1086-1090 (2008).
3. Patent Application PCT No PCT/FR2008/001302.
4. L. Clément, R. Pantel, L.K.T. Kwakman, J.-L. Rouvière, Appl. Phys. Lett. 85, 651-653 (2004).
5. F. Houdellier, C. Roucau, L. Clément, J.-L. Rouvière, M.-J. Casanove, Ultramicroscopy 106, 951-959 (2006).
6. P. Zhang et al., Appl. Phys. Lett. 89, 161907 (2006).
7. F. Hüe, M.J. Hÿtch, F. Houdellier, J.M. Hartmann, H. Bender, A.Claverie, Phys.Rev. Lett.100, 156602 (2008).
8. K. Usuda, T. Numata, T. Irisawa, N. Hirashita, S. Takagi, Mater. Sci. Eng. B