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Applied Physics Letters

Volumn 96, Issue 17, 2010, Pages

Phototransistor with nanocrystalline Si/amorphous Si bilayer channel

(4) Vygranenko, Yuri a Nathan, Arokia b Vieira, Manuela a,c Sazonov, Andrei d

a INSTITUTO SUPERIOR DE ENGENHARIA DE LISBOA (Portugal)

b UNIVERSITY COLLEGE LONDON (United Kingdom)

c UNINOVA (Portugal)

d UNIVERSITY OF WATERLOO (Canada)

Author keywords

[No Author keywords available]

Indexed keywords

ABSORPTION LAYER; BI-LAYER; BIASING CONDITIONS; CHANNEL LENGTH; DIELECTRIC LAYER; FIELD-EFFECT; HYDROGENATED AMORPHOUS SILICON; INCIDENT LIGHT INTENSITY; LOW-LIGHT-LEVEL DETECTION; NANOCRYSTALLINES; OFF-CURRENT; PHOTOCONDUCTIVE GAINS; RADIO-FREQUENCY PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION; RESPONSE CHARACTERISTIC; SUBTHRESHOLD REGION; TRANSPORT LAYERS;

NANOCRYSTALLINE SILICON; PHOTOTRANSISTORS; PLASMA DEPOSITION; PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION; SEMICONDUCTING SILICON COMPOUNDS;

AMORPHOUS SILICON;

EID: 77952370575 PISSN: 00036951 EISSN: None Source Type: Journal
DOI: 10.1063/1.3422479 Document Type: Article

Times cited : (12)

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