Impact of the free electron distribution on the random telegraph signal capture kinetics in submicron n-metal-oxide-semiconductor field-effect transistors

Applied Physics Letters

Volumn 73, Issue 17, 1998, Pages 2444-2446

  Lukyanchikova, N B ^a   Petrichuk, M V ^a   Garbar, N P ^a   Simoen, E ^b   Claeys, C ^c,d  

^a INSTITUTE OF SEMICONDUCTOR PHYSICS   (Ukraine)

^b IMEC   (Belgium)

^c IMEC   (Belgium)

^d UNIVERSITY OF LEUVEN   (Belgium)

Author keywords

[No Author keywords available]

Indexed keywords

CARRIER CONCENTRATION; CARRIER MOBILITY; ELECTRIC POTENTIAL; ELECTRODES; INTERFACES (MATERIALS); KINETIC THEORY; MATHEMATICAL MODELS; MOSFET DEVICES; SUBSTRATES; SURFACES;

COULOMB BLOCKADE MODEL; DRAIN SOURCE VOLTAGE; FREE ELECTRON DISTRIBUTION; RANDOM TELEGRAPH SIGNAL CAPTURE KINETICS; SHOCKLEY-READ-HALL MODEL;

ELECTRON TRANSPORT PROPERTIES;

EID: 0032569529     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.122476     Document Type: Article

References (8)

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