Preparation and characterization of Mn-doped ZnO thin films

Journal of Optoelectronics and Advanced Materials

Volumn 12, Issue 4, 2010, Pages 895-899

  Rusu, G G ^a   Gorley, P ^b   Baban, C ^a   Rambu, A P ^a   Rusu, M ^a  

^a ALEXANDRU IOAN CUZA UNIVERSITY OF IASI   (Romania)

^b CHERNIVTSI NATIONAL UNIVERSITY   (Ukraine)

Author keywords

Doped zinc Oxide; Electrical properties; Optical properties; Thin films; X ray diffraction

Indexed keywords

ELECTRIC PROPERTIES; ENERGY GAP; FILM PREPARATION; II-VI SEMICONDUCTORS; MAGNETIC SEMICONDUCTORS; MANGANESE; METALLIC FILMS; OPTICAL PROPERTIES; OXIDE FILMS; OXIDE MINERALS; SEMICONDUCTING ZINC COMPOUNDS; SUBSTRATES; TEMPERATURE DISTRIBUTION; THERMOOXIDATION; THIN FILMS; VACUUM EVAPORATION; WIDE BAND GAP SEMICONDUCTORS; X RAY DIFFRACTION; ZINC METALLOGRAPHY; ZINC OXIDE; ZINC SULFIDE;

AMBIENT CONDITIONS; DOPED ZINC OXIDES; ELECTRICAL CONDUCTIVITY; MN-DOPED ZNO THIN FILMS; POLYCRYSTALLINE WURTZITE; SUBSTRATE SURFACE; TEMPERATURE DEPENDENCE; THERMAL OXIDATION;

OPTICAL FILMS;

EID: 77952060001     PISSN: 14544164     EISSN: None     Source Type: Journal    
DOI: None     Document Type: Article

References (41)

1. H. L. Hartnagel, A. L. Dawar, A. K. Yain, C. Jajadish, Semiconducting Transparent Thin Films, Inst. of Publishing, Bristol, 1995.
2. T. Diethl, O. Ohno, F. Matsukura, J. Cibert, D. Ferrand, Science, 287, 1019 (2000).
3. M. Godlewski, A. W-Glodowska, E. Guziewicz, S. Yatsunenko, A. Zakrzewski, Y. Dumont, E. Chikoidze, M. R. Phillips, Opt. Mater.doi 10.1016/j.optmat.2008. 12. 031.
4. G. Brauer, W. Anwand, W. Skorupa, H. Schmidt, M. Diaconu, M. Lorenz, M. Grundmann, Superlatt. Microstruct. 39, 41 (2006).
5. S. Karamat, S. Mahmood, J. J. Lin, Z. Y. Pan, P. Lee, T. L. Tan, S. V. Springham, R. V. Ramanujan, R.S. Rawat, Appl. Surf. Sci., 254, 7285 (2008).
6. A. K. Pradhan, D. Hunter, K. Zhang, J. B. Dadson, S. Mohanty, T. M. Williams, K. Lord, R. R. Rakhimov, U. N. Roy, Y. Cui, A. Burger, J. Zhang, D.J.Sellmyer, Appl. Surf. Sci., 252, 1628 (2005).
7. P. Bhattacharya, R. Das, J. Nieves, Yu. I. Yuzyuk, R. S. Katiyar, Mat. Res. Symp. Proc. 764, C3.20.1 (2003),
8. M. Diaconu, H. Schmidt, H. Hochmuth, M. Lorenz, G. Benndorf, J. Lenzner, D. Spemann, A. Setzer, K-W. Nielsen, P. Esquinazi, M. Grundman, Thin Solid Films, 486, 117 (2005).
9. C. Liu, F. Yun, B. Xiao, S-J. Cho, Y. T. Moon, H. Morkoc, M. Abouzaid, R. Ruterana, K. M. Yu, W. Walukiewicz, J. Appl. Phys., 97, 126107 (2005).
10. C. Liu, B. Xiao, F. Yun, H. Lee, U. Ozgur, Y. T. Moon, H. Morkoc, M. Abouzaid, P. Ruterana, Superlatt. Microstruct. 39, 124 (2006).
11. Y. M. Kim, M. Yoon, I. W. Park, J. H. Lyou, Solid State Commun., 129, 175 (2004).
12. M. Yuonesi, M. E. Ghazi, M. Izadifard, M. Yaghobi, J. Opoelectron. Adv. Mater., 10(10), 2603 (2008).
13. G. Srinivasan, J. Kumar, J. Crys. Growth, 310, 1841 (2008).
14. V. Avrutin, N. Izyumskaya, U. Ozgur, A. El-Shaer, H. Lee, W. Schoch, F. Reuss, V. G. Beshenkov, A. N. Pustovit, A. Che Mofor, A. Bakin, H. Morkoc, A. Waag, Superlatt. Microstruct., 39, 291 (2006).
15. J. Zhao, L.Hu, Z. Wang, Y. Zhao, X. Liang, M. Wang, Appl. Surf. Sci., 229(1- 4), 311 (2004).
16. R. K. Gupta, N. Shridhar, M. Katiyar, Materials Science in Semicond. Processing, 5(1), 11 (2002).
17. G. G. Rusu, M. Rusu, N. Apetroaei, Thin Solid Films, 515, 8699 (2007).
18. G. G. Rusu, M. Rusu, J. Optoelectron. Adv. Mater., 7(2), 885 (2005).
19. G. G. Rusu, M. Rusu, M. Gîrtan, Vacuum 81, 1476 (2007).
20. G. G. Rusu, A. P. Râmbu, M. Rusu, J. Optoelectron. Adv. Mater., 10(2), 339 (2008).
21. Joint Committee on Powder Diffraction Standards, Powder Diffraction File, card no. 04-0831.
22. Joint Committee on Powder Diffraction Standards, Powder Diffraction File, card no. 32-0637.
23. Joint Committee on Powder Diffraction Standards, Powder Diffraction File, card no. 36-1451.
24. T. Fukumura, Z. Jin, A. Ohtomo, H. Koinuma, M. Kawasaki, Appl. Phys.Lett. 75, 3366 (1999).
25. H. K. Yadav, K. Sreenivas, V. Gupta, J. Appl. Phys., 99, 083507 (2006).
26. C. S. Barret, T. B. Massalski, Structure of Metals, Pergamon Press, Oxford, 1980, p. 204.
27. A. A. Ramadan, A. A. Abd El-Mongy, A. M. El-Shabiny, A. T. Mater, S. H. Mostafa, E. A. El-Sheheedy, H. M. Hashem, Cryst. Res. Technol., 44(1), 111 (2009).
28. E. Chikoidze, Y. Dumont, F. Jomard, O. Gorochov, Thin Solis Films, 515, 8519 (2007).
29. Y. Xia, F.Huang, W. Wang, Y. Wang, K. Yuan, M. Liu, J. Shi, Opt. Mater., 31, 311 (2008).
30. D. S. Reddy, S. K. Sharma, Y. D. Reddy, B. S. Reddy, K. R. Gunasekhar, P. S. Reddy, J. Opoelectron. Adv. Mater., 10(10), 2607 (2008).
31. B. D. Cullity, R. S. Stock, Elements of X-Ray Diffraction, Prentice Hall, 3rd ed, New Jersey, 2001.
32. J. I. Pankove, Optical Processes in Semiconductors, Dover, New York, 1971.
33. R. Bangava (Ed), Properties of wide bandgap II-VI semiconductors, EMIS Inspect London, 1997.
34. C. Jagadish, S. J. Pearson (Eds), Zinc Oxide Bulk, Thin Films and Nanostructures; Processing, Properties and Applications, Elsevier, Amsterdam, 2006.
35. N. F. Mott, E. A. Davis, Electronic Processes in Non- Crystalline Materials, Clarendon Press, Oxford, 1979.
36. S. K.Mandal, T. K.Nath, Thin Solid Films 515, 2535 (2006).
37. Y. S. Wang, P. J. Thomas, P. O'Brien, J. Phys. Chem. B, 110 (43), 21412 (2006).
38. G. Harbeke (Ed.), Polycrystalline Semiconductors. Physical Properties and Applications, Spring-Verlag, Berlin, 1985.
39. Z. L. Wang, J. Phys. Condens. Matter 16, R829 (2004).
40. K. Seeger, Semiconductor Physics, Springer, Berlin, 1999.
41. L. L. Kazmersky, Polycrystalline and Amorphous Thin Films and Devices, Academic Press, London, 1980.