Structural and photoluminescence properties of Zn1-xMn xO nanoparticles for optoelectronic device applications

Journal of Optoelectronics and Advanced Materials

Volumn 10, Issue 10, 2008, Pages 2607-2610

  Reddy, D Sreekantha ^a   Sharma, S K ^b   Reddy, Y D ^c   Reddy, B S ^c   Gunasekhar, K R ^b   Reddy, P Sreedhara ^c  

^a Chungbuk National University   (South Korea)

^b INDIAN INSTITUTE OF SCIENCE   (India)

^c SRI VENKATESWARA UNIVERSITY   (India)

Author keywords

Diluted magnetic semiconductors; Nanoparticles; Optoelectronics; Photoluminescence

Indexed keywords

BLUE SHIFT; DILUTED MAGNETIC SEMICONDUCTORS; MAGNETIC SEMICONDUCTORS; MANGANESE COMPOUNDS; NANOMAGNETICS; NANOPARTICLES; OPTOELECTRONIC DEVICES; PARTICLE SIZE; PHOTOLUMINESCENCE; SCANNING ELECTRON MICROSCOPY; SOLID STATE REACTIONS; URANIUM METALLOGRAPHY; VANADIUM METALLOGRAPHY; ZINC COMPOUNDS; ZINC SULFIDE;

COMPOSITION RANGES; MN CONCENTRATIONS; PHOTOLUMINESCENCE PROPERTIES; POLYCRYSTALLINE; QUANTUM CONFINEMENT EFFECTS; ROOM TEMPERATURE PHOTOLUMINESCENCE SPECTRA; SOLID STATE REACTION METHOD; WURTZITE STRUCTURE;

SEMICONDUCTOR QUANTUM WELLS;

EID: 55349142146     PISSN: 14544164     EISSN: None     Source Type: Journal    
DOI: None     Document Type: Article

References (18)

1. Y. Ohto, T. Haga and Y. Abe Jpn. J. Appl. Lett 36, L1040 (1997).
2. D. C. Look Mater. Sci. Eng., B 80, 381 (2001).
3. D. C. Reynolds, D. C. look, B. Jogai, C. W. Litton, G. Gantwell and W. C. Harsch Phys. Rev. B: Concdens. Matter 60, 2340 (1999).
4. U. Ozgur, Ya, I. Alivov, C. Liu, A. Teke, M. A. reshcchikov, S. Dogan, V. Avrutin, S. J. Cho and H. Morkoc; J. Appl. Phys 98, 041301 (2005).
5. K. J. Ko, Y. F. Chen, T. Yao, I. Kobayashi and H. Uchiki; Appl. Phys. Lett. 76 (11), 1905 (2000).
6. M. Ikeda, K. Ihow, S. Hisano; J. Phys. Soc. Jpn. 25, 455 (1968).
7. J. Wedermeyer, U. Stutenbaumer, H. E. Gumlich; J. Lumin 40, 533 (1988).
8. T. Hashina, H. Kawai, Jpn. J. Appl. Phys 19, L267 (1980).
9. J. Oladeji, L. Chow, J. R. Liu, W. K. Chu, A. N. Dbustamante, C. Fredricken, A. F. Schulte; Thin Solid Films 359, 154 (2001).
10. Ozsan, D. R. Johnson, M. Sadegri, P. Sivapathasundaram, G. Good, Let. M. J. Furlong, L. M. Peter, A. A. Shingleton, J. Mater. Sci. Mater. Electronics 7, 119 (1990).
11. L. Levi, N. Felton, D. Ingert; J. Phys. Chem B 102, 9153 (1993).
12. T. Fukumura, M. Kawasaki, M. Mizuguchi, Hosoka Phys. Rev. 112, 1058 (1958).
13. F. A. Krogerk, H. J. Vink; J. Chem. Phys. 22, 250 (1954).
14. E. G. Bylander, J. Appl. Phys. 49, 1188 (1978).
15. J. A. Voigt, B. E. Gnade; J. Appl. Phys. 79, 7983 (1996).
16. W. S. Shi, O. Agyeman, C. N. Xu; J. Appl. Phys. 91, 5640 (2002).
17. W. S. Mo, M. W. Shao, H. M. Hu, L. Yang, W. C. Yu, Y. T. Qua, J. Crys. Growth 244, 364 (2002).
18. J. B. Liang, J. W. Liu, Q. Xie, S. Bai, W. C. Yu, Y. T. Qin; J. Phys. Chem 199, 9463 (2005).