Addressing difficulties in using XRD intensity for structural study of thin films

Crystal Research and Technology

Volumn 44, Issue 1, 2009, Pages 111-116

  Ramadan, A A ^a   Abd El Mongy, A A ^a   El Shabiny, A M ^b   Mater, A T ^a   Mostafa, S H ^a   El Sheheedy, E A ^a   Hashem, H M ^a  

^a Helwan University   (Egypt)

^b NATIONAL RESEARCH CENTRE   (Egypt)

Author keywords

Crystallographic texture; Lattice defects; SnO2; Structure characteristics; Thin films; X ray crystallography

Indexed keywords

CHEMICAL VAPOR DEPOSITION; CRYSTALLOGRAPHY; DEFECTS; DIFFRACTION; DIFFRACTION GRATINGS; DIFFRACTION PATTERNS; HOLOGRAPHIC INTERFEROMETRY; INTERFEROMETRY; MINERALOGY; PYROLYSIS; SELF ASSEMBLY; SOLIDS; SPRAY PYROLYSIS; TEXTURES; THIN FILMS; X RAY ANALYSIS; X RAY CRYSTALLOGRAPHY; X RAY DIFFRACTION ANALYSIS;

CRYSTALLOGRAPHIC INFORMATIONS; CRYSTALLOGRAPHIC PREFERRED ORIENTATIONS; CRYSTALLOGRAPHIC TEXTURE; DEPOSITION TIME; DIFFRACTION INTENSITIES; INTEGRATED INTENSITIES; LATTICE DEFECTS; LATTICE PARAMETERS; MOLARITY; PROFILE ANALYSIS; RELATIVE INTENSITIES; SNO2; SPRAY-PYROLYSIS TECHNIQUES; STRUCTURAL STUDIES; STRUCTURE CHARACTERISTICS; SUBSTRATE TEMPERATURES; TEXTURE COEFFICIENTS; XRD;

FILM PREPARATION;

EID: 59349089099     PISSN: 02321300     EISSN: 15214079     Source Type: Journal    
DOI: 10.1002/crat.200800201     Document Type: Article

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