Optical and electrical properties of ZnMnO layers grown by peroxide MBE

Superlattices and Microstructures

Volumn 39, Issue 1-4, 2006, Pages 291-298

  Avrutin, V ^a,b,e   Izyumskaya, N ^a   Ozgur U ^b   El Shaer, A ^c   Lee, H ^b,f   Schoch, W ^a   Reuss, F ^a   Beshenkov, V G ^d   Pustovit, A N ^d   Mofor, A Che ^c   Bakin, A ^c   Morkoc H ^b   Waag, A ^c  

^a UNIVERSITY OF ULM   (Germany)

^b Virginia Commonwealth University   (United States)

^c TECHNICAL UNIVERSITY OF BRAUNSCHWEIG   (Germany)

^d INSTITUTE OF MICROELECTRONICS TECHNOLOGY AND HIGH PURITY MATERIALS   (Russian Federation)

^e VIRGINIA COMMONWEALTH UNIVERSITY   (United States)

^f Kyung Hee University   (South Korea)

Author keywords

Band gap; Diluted magnetic semiconductors DMS; Molecular beam epitaxy MBE; Optical absorption; Photoluminescence; Zinc oxide ZnO; ZnMnO

Indexed keywords

HALL EFFECT; MANGANESE COMPOUNDS; MOLECULAR BEAM EPITAXY; OPACITY; OXYGEN; PEROXIDES; PHOTOLUMINESCENCE; ZINC COMPOUNDS;

BAND GAP; DILUTED MAGNETIC SEMICONDUCTORS DMS; ZINC OXIDE ZNO; ZNMNO;

CRYSTAL LATTICES;

EID: 29344454929     PISSN: 07496036     EISSN: 10963677     Source Type: Journal    
DOI: 10.1016/j.spmi.2005.08.051     Document Type: Article

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