Addressing dynamic process changes in high volume plasma etch manufacturing by using multivariate process control

IEEE Transactions on Semiconductor Manufacturing

Volumn 23, Issue 2, 2010, Pages 185-193

  Parkinson, Blake R ^a   Lee, Hyung ^b   Funk, Merritt ^c   Prager, Daniel ^c   Yamashita, Asao ^d   Sundararajan, Radha ^c   Edgar, Thomas F ^b  

^a TEL TECHNOLOGY CENTER   (United States)

^b The University of Texas at Austin   (United States)

^c TOKYO ELECTRON AMERICA INC   (United States)

^d TOKYO ELECTRON LTD   (Japan)

Author keywords

Gate CD control; Integrated metrology; Multivariable control; Niederlinski stability; Nonsquare relative gain array; Plasma etch modeling; Scatterometry; Side wall angle control; Wafer to wafer feedback

Indexed keywords

CD CONTROL; INTEGRATED METROLOGY; MULTIVARIABLE CONTROL; PLASMA ETCH; RELATIVE GAIN ARRAY; SCATTEROMETRY; SIDE WALL ANGLE CONTROL; SIDEWALL ANGLES;

DATA STORAGE EQUIPMENT; FEEDBACK; MEASUREMENTS; MULTIVARIABLE CONTROL SYSTEMS; NANOTECHNOLOGY; OPTIMIZATION; PLASMA STABILITY; PLASMAS; WALL FLOW; WALLS (STRUCTURAL PARTITIONS);

PROCESS CONTROL;

EID: 77952001118     PISSN: 08946507     EISSN: None     Source Type: Journal    
DOI: 10.1109/TSM.2010.2041293     Document Type: Conference Paper

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