Increased uniformity control in a 45nm polysilicon gate etch process

Proceedings of SPIE - The International Society for Optical Engineering

Volumn 7272, Issue , 2009, Pages

  Parkinson, Blake ^a   Prager, Dan ^a   Funk, Merritt ^a   Sundararajan, Radha ^a   Yamashita, Asao ^b   Bandy, Kenneth ^c   Meyette, Eric ^c  

^a TOKYO ELECTRON AMERICA INC   (United States)

^b TOKYO ELECTRON LTD   (Japan)

^c IBM MICROELECTRONICS   (United States)

Author keywords

45nm gate etch; CDU; Dose correction; Lithography etch interactions; Multivariate control; Wafer to wafer control; Within wafer CD uniformity control

Indexed keywords

45NM GATE ETCH; CDU; DOSE CORRECTION; MULTIVARIATE CONTROL; WAFER TO WAFER CONTROL; WITHIN WAFER CD UNIFORMITY CONTROL;

CHEMICAL PLANTS; DATA STORAGE EQUIPMENT; INTELLIGENT CONTROL; LITHOGRAPHY; MATLAB; PHOTORESISTS; POLYSILICON;

PROCESS CONTROL;

EID: 66649093850     PISSN: 0277786X     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1117/12.816095     Document Type: Conference Paper

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