Thin film transistors with wurtzite ZnO channels grown on Si 3N4/SiO2/Si (111) substrates by pulsed laser deposition

Proceedings of SPIE - The International Society for Optical Engineering

Volumn 7603, Issue , 2010, Pages

  Rogers, D J ^a   Sandana, V E ^a,b   Teherani, F Hosseini ^a   Razeghi, M ^b  

^a 8 Route de Chevreuse France   (France)

^b NORTHWESTERN UNIVERSITY   (United States)

Author keywords

Pulsed laser deposition; Thin film transistor; ZnO

Indexed keywords

BACK GATES; C-AXIS ORIENTATIONS; CRYSTALLOGRAPHIC QUALITY; ELECTRICAL MEASUREMENT; ENHANCEMENT-MODE; GLASS SUBSTRATES; HIGH TRANSMISSION; HIGH-FREQUENCY APPLICATIONS; POLYCRYSTALLINE WURTZITE; SCANNING ELECTRON MICROSCOPE; SI(111) SUBSTRATE; SMOOTH SURFACE; VISIBLE SPECTRA; WURTZITES; ZNO; ZNO LAYERS; ZNO ON SI;

DEPOSITION; PULSED LASER DEPOSITION; SCANNING ELECTRON MICROSCOPY; SILICON; SILICON COMPOUNDS; SUBSTRATES; SURFACE STRUCTURE; THIN FILM TRANSISTORS; THIN FILMS; X RAY DIFFRACTION; ZINC OXIDE; ZINC SULFIDE;

PULSED LASERS;

EID: 77951724976     PISSN: 0277786X     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1117/12.848512     Document Type: Conference Paper

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