Reliability characterization of phase change memory

Proceedings - 2009 10th Non-Volatile Memory Technology Symposium, NVMTS 2009

Volumn , Issue , 2009, Pages 7-11

  Gleixner, Bob ^a   Pellizzer, Fabio ^b   Bez, Roberto ^b  

^a R and D Technology Development   (United States)

^b Numonyx   (Italy)

Author keywords

Chalcogenide; Phase change memory; Reliability

Indexed keywords

ACTIVE MATERIAL; AMORPHOUS STATE; CYCLING ENDURANCE; DATA RETENTION; LARGE ARRAYS; META-STABLE; NONVOLATILE MEMORY DEVICES; OPTIMIZED PROCESS; RELIABILITY CHARACTERIZATION; VOID FORMATION;

FLASH MEMORY; PULSE CODE MODULATION; RELIABILITY; TECHNOLOGY;

PHASE CHANGE MEMORY;

EID: 77951682757     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/NVMT.2009.5429783     Document Type: Conference Paper

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