A 4-Mb non-volatile Chalcogenide Random Access Memory designed for space applications: Project status update

Proceedings - 2008 9th Annual Non-Volatile Memory Technology Symposium, NVMTS 2008

Volumn , Issue , 2008, Pages

  Rodgers, John ^a   Maimon, Jonathan ^b   Storey, Thomas ^a   Lee, David ^a   Graziano, Michael ^a   Rockett, Leonard ^a   Hunt, Kenneth ^c  

^a BAE SYSTEMS   (United States)

^b Ovonyx Corporation   (United States)

^c AIR FORCE RESEARCH LABORATORY   (United States)

Author keywords

Chalcogenide; Memory; Nonvolatile; Phase change; Radiation hardened

Indexed keywords

BAE SYSTEMS; CHALCOGENIDE RANDOM ACCESS MEMORIES; DATA RETENTIONS; DESIGN AND OPERATIONS; ERROR-CORRECTING CODES; FAILURE MECHANISMS; HEAVY ION; HIGH DENSITIES; LOW-POWER; MEMORY; MEMORY CELLS; NON VOLATILES; NON-VOLATILE MEMORIES; NON-VOLATILE RAMS; NONVOLATILE; PHASE CHANGE; PHASE-CHANGE MEMORIES; PRODUCT TECHNOLOGIES; RAD-HARD; RADIATION ENVIRONMENTS; RADIATION HARDENED; SECOND ORDERS; SENSE AMPS; SOFT ERRORS; SPACE RADIATION EFFECTS; SPACECRAFT APPLICATIONS; UPSET RATES; US AIR FORCES;

ERROR CORRECTION; HARDENING; HEAVY IONS; MILITARY APPLICATIONS; POLYMER BLENDS; PRODUCT DEVELOPMENT; PROJECT MANAGEMENT; RADIATION EFFECTS; RADIATION HARDENING; RANDOM ACCESS STORAGE; SEMICONDUCTOR STORAGE; SPACE APPLICATIONS;

PHASE CHANGE MEMORY;

EID: 78650758894     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/NVMT.2008.4731183     Document Type: Conference Paper

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