Linearized dual-band power amplifiers with integrated baluns in 65 nm CMOS for a 2 × 2 802.11n MIMO WLAN SoC

IEEE Journal of Solid-State Circuits

Volumn 45, Issue 5, 2010, Pages 955-966

  Afsahi, Ali ^a,b   Behzad, Arya ^a   Magoon, Vikram ^a   Larson, Lawrence E ^c  

^a BROADCOM CORPORATION   (United States)

^b UNIVERSITY OF CALIFORNIA   (United States)

^c San Diego   (United States)

Author keywords

802.11n; CMOS; Linearization; MIMO; OFDM; Power amplifier; Reliability; WLAN

Indexed keywords

2.4 GHZ-BAND; 5 GHZ BAND; 802.11N; ACCELERATED AGING TEST; DRAIN EFFICIENCY; DUAL-BAND; FULLY INTEGRATED; MIMO; MIMO-OFDM; ON CHIPS; SATURATED OUTPUT POWER; WLAN APPLICATIONS;

CMOS INTEGRATED CIRCUITS; ORTHOGONAL FREQUENCY DIVISION MULTIPLEXING; ORTHOGONAL FUNCTIONS; POWER AMPLIFIERS; PROGRAMMABLE LOGIC CONTROLLERS; RELIABILITY; TESTING;

LINEARIZATION;

EID: 77951681253     PISSN: 00189200     EISSN: None     Source Type: Journal    
DOI: 10.1109/JSSC.2010.2041401     Document Type: Article

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