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Volumn 174-175, Issue , 2003, Pages 170-175

Impulse plasma deposition of aluminum oxide layers for Al2O3/Si, SiC, GaN systems

Author keywords

Aluminum oxide; Impulse plasma deposition; Stoichiometry

Indexed keywords

COMPOSITION; INTERFACES (MATERIALS); MICROELECTRONICS; MORPHOLOGY; NANOSTRUCTURED MATERIALS; SCANNING ELECTRON MICROSCOPY;

EID: 0043194088     PISSN: 02578972     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0257-8972(03)00527-9     Document Type: Article
Times cited : (13)

References (19)
  • 8
    • 0042017972 scopus 로고    scopus 로고
    • June 9-10, 1999, Antibes-Juan-les-Pins, France, Revue 'Le Vide: Science, technique et applications', Supplement No. 291-Janvier-Fevrier-Mars
    • L. Kubacki, J. Szmidt, K. Zdunek, Proceeding of the 12th International Colloquium on Plasma Processes CIP'99, June 9-10, 1999, Antibes-Juan-les-Pins, France, 302; Revue 'Le Vide: science, technique et applications', Supplement No. 291-Janvier-Fevrier-Mars 1999
    • (1999) Proceeding of the 12th International Colloquium on Plasma Processes CIP'99 , pp. 302
    • Kubacki, L.1    Szmidt, J.2    Zdunek, K.3


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.