Improved interface properties of Al2O3 optical coatings on GaAs deposited by e-beam

Semiconductor Science and Technology

Volumn 23, Issue 2, 2008, Pages

  Bhan, R K ^a   Jain, Alok ^a   Kumar, Sunil ^a   Lohani, Kamal ^a   Mehta, S K ^a  

^a SOLID STATE PHYSICS LABORATORY   (India)

Author keywords

[No Author keywords available]

Indexed keywords

CHARGE DENSITY; CURRENT VOLTAGE CHARACTERISTICS; DEPOSITION; EVAPORATION; SEMICONDUCTING GALLIUM ARSENIDE; SILICON WAFERS;

E-BEAMS; INTERFACE PROPERTIES; INTERFACE STATE DENSITY;

OPTICAL COATINGS;

EID: 42549153441     PISSN: 02681242     EISSN: 13616641     Source Type: Journal    
DOI: 10.1088/0268-1242/23/2/025017     Document Type: Article

References (8)

1. Wu Y Q, Lin H C, Ye P D and Wilk G D 2007 Appl. Phys. Lett. 90 072105
2. Schubert E F, Passlack M, Hong M, Mannerts M, Opila R L, Pfeiffer L N, West K W, Bethea C G and Zydzik G J 1994 Appl. Phys. Lett. 64 2976
3. Ye P D et al 2003 IEEE Electron Device Lett. 24 209
4. Wilk G D, Wallace R M and Anthony J M 2001 J. Appl. Phys. 89 5243
5. Lu H-L, Sun L, Ding S-J, Xu M, Zhang D W and Wang L-K 2006 Appl. Phys. Lett. 89 152910
6. 1984-1985 CRC Handbook of Chemistry and Physics 65th edn (Boca Raton, FL: CRC Press) p E55
7. Sze S M (ed) 1981 Physics of Semiconductor Devices (New York: Wiley) chapter 7 p 363
8. Bartzsch H, Glö D, Böcher B, Frach P and Goedicke K 2003 Surf. Coating Technol. 174-175 774