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Journal of Electronic Materials

Volumn 39, Issue 2, 2010, Pages 178-186

Comparison of bowing behaviors between III-V and II-VI common-cation semiconductor ternary alloys

(3) Tit, Nacir a Amrane, Noureddine a Reshak, Ali Hussain b

a UNITED ARAB EMIRATES UNIVERSITY (United Arab Emirates)

b UNIVERSITY OF SOUTH BOHEMIA (Czech Republic)

Author keywords

Electronic structure calculations; II VI semiconductors; III V semiconductors; Photoluminescence

Indexed keywords

BANDGAP BOWING; ELECTRON CHARGE DENSITY; ELECTRONIC STRUCTURE CALCULATIONS; II-IV SEMICONDUCTORS; II-VI COMPOUNDS; II-VI SEMICONDUCTOR; IONICITIES; PLANE WAVE; SPIN-ORBIT COUPLINGS; THEORETICAL RESULT; TIGHT BINDING METHODS; TOTAL DENSITY; VALENCIES;

CADMIUM COMPOUNDS; CHEMICAL BONDS; COMPETITION; ELECTRONEGATIVITY; ELECTRONIC PROPERTIES; ELECTRONIC STRUCTURE; NEGATIVE IONS; PHOTOLUMINESCENCE; POSITIVE IONS; TERNARY ALLOYS; TERNARY SYSTEMS;

CERIUM ALLOYS;

EID: 77951258642 PISSN: 03615235 EISSN: None Source Type: Journal
DOI: 10.1007/s11664-009-0972-3 Document Type: Article

Times cited : (8)

References (37)

1
- 0043217903
- 10.1146/annurev.ms.25.080195.003431 1:CAS:528:DyaK2MXntlKksrs%3D
- L.A. Kolodziejski R.L. Gunshor A.V. Nurmikko 1995 Annu. Rev. Mater. Sci. 25 711 10.1146/annurev.ms.25.080195.003431 1:CAS:528:DyaK2MXntlKksrs%3D
- (1995) Annu. Rev. Mater. Sci. , vol.25 , pp. 711
- Kolodziejski, L.A.¹ Gunshor, R.L.² Nurmikko, A.V.³

2
- 0035356466
- Band parameters for III-V compound semiconductors and their alloys
- DOI 10.1063/1.1368156
- I. Vurgaftman J.R. Meyer L.R. Ram-Mohan 2001 J. Appl. Phys. 89 5815 10.1063/1.1368156 1:CAS:528:DC%2BD3MXkt1Wrt74%3D 2001JAP....89.5815V (Pubitemid 33599303)
- (2001) Journal of Applied Physics , vol.89 , pp. 5815-5875
- Vurgaftman, I.¹ Meyer, J.R.² Ram-Mohan, L.R.³

3
- 40749161085
- Springer Berlin 10.1007/978-3-540-74529-7
- A. Erol, Dilute III-V Nitride Semiconductors and Material Systems (Berlin: Springer, 2008).
- (2008) Dilute III-V Nitride Semiconductors and Material Systems
- Erol, A.¹

4
- 33646517476
- Density functional study of Zn1-x Mgx Sey Te1-y quaternary semiconductor alloys
- DOI 10.1103/PhysRevB.73.195202
- F. El-Haj Hassan S.J. Hashemifar H. Akbarzadeh 2006 Phys. Rev. B 73 195202 10.1103/PhysRevB.73.195202 2006PhRvB..73s5202E (Pubitemid 43710711)
- (2006) Physical Review B - Condensed Matter and Materials Physics , vol.73 , Issue.19 , pp. 195202
- El Haj Hassan, F.¹ Hashemifar, S.J.² Akbarzadeh, H.³

5
- 0033342859
- Anomalous variation of band gap with alloy composition: Cation vs anion substitution in ZnTe
- DOI 10.1016/S0038-1098(99)00356-7
- M.J. Seong H. Alawadhi I. Miotkowski A.K. Ramdas S. Miotkowska 1999 Solid State Commun. 112 329 10.1016/S0038-1098(99)00356-7 1:CAS:528: DyaK1MXmslCjtr4%3D 1999SSCom.112..329S (Pubitemid 30547608)
- (1999) Solid State Communications , vol.112 , Issue.6 , pp. 329-334
- Seong, M.J.¹ Alawadhi, H.² Miotkowski, I.³ Ramdas, A.K.⁴ Miotkowska, S.⁵

6
- 27144468645
- xTe ternary alloys
- DOI 10.1088/0953-8984/17/44/001, PII S095389840506892X
- Z. Charifi F. El-Haj Hassan H. Baaziz Sh. Khosravizadeh S.J. Hashemifar H. Akbarzadeh 2005 J. Phys.: Condens. Matter. 17 7077 10.1088/0953-8984/17/44/ 001 1:CAS:528:DC%2BD2MXht1OgtbrE 2005JPCM...17.7077C (Pubitemid 41501913)
- (2005) Journal of Physics Condensed Matter , vol.17 , Issue.44 , pp. 7077-7088
- Charifi, Z.¹ El Haj Hassan, F.² Baaziz, H.³ Khosravizadeh, Sh.⁴ Hashemifar, S.J.⁵ Akbarzadeh, H.⁶

7
- 33846284530
- x alloys
- DOI 10.1063/1.2407274
- R. Roucka J. Tolle B. Forrest J. Kouvetakis V.R. D'Costa J. Menéndez 2007 J. Appl. Phys. 101 013518 10.1063/1.2407274 2007JAP...101a3518R (Pubitemid 46120627)
- (2007) Journal of Applied Physics , vol.101 , Issue.1 , pp. 013518
- Roucka, R.¹ Tolle, J.² Forrest, B.³ Kouvetakis, J.⁴ D'costa, V.R.⁵ Menndez, J.⁶

8
- 0033242854
- A. Zunger 1999 Phys. Status Solidi B 216 217
- (1999) Phys. Status Solidi B , vol.216 , pp. 217
- Zunger, A.¹

9
- 0346355354
- 10.1063/1.126711 1:CAS:528:DC%2BD3cXjvVOltLo%3D 2000ApPhL.76.3576T
- N. Tit M.W.C. Dharma-wardana 2000 Appl. Phys. Lett. 76 3576 10.1063/1.126711 1:CAS:528:DC%2BD3cXjvVOltLo%3D 2000ApPhL..76.3576T
- (2000) Appl. Phys. Lett. , vol.76 , pp. 3576
- Tit, N.¹ Dharma-Wardana, M.W.C.²

10
- 33744954220
- 1-x alloys
- DOI 10.1088/0022-3727/39/12/008, PII S0022372706171697
- N. Tit 2006 J. Phys. D: Appl. Phys. 39 2514 10.1088/0022-3727/39/12/008 1:CAS:528:DC%2BD28XmvV2ru70%3D 2006JPhD...39.2514T (Pubitemid 43855596)
- (2006) Journal of Physics D: Applied Physics , vol.39 , Issue.12 , pp. 2514-2521
- Tit, N.¹

11
- 79956027728
- Negative band gap bowing in epitaxial InAs/GaAs alloys and predicted band offsets of the strained binaries and alloys on various substrates
- DOI 10.1063/1.1470693
- K. Kim L.W. Hart Gus A. Zunger 2002 Appl. Phys. Lett. 80 3105 10.1063/1.1470693 1:CAS:528:DC%2BD38XjtVOmu74%3D 2002ApPhL..80.3105K (Pubitemid 34562572)
- (2002) Applied Physics Letters , vol.80 , Issue.17 , pp. 3105
- Kim, K.¹ Hart, G.L.W.² Zunger, A.³

12
- 25344473446
- 10.1103/PhysRevB.39.6279 1989PhRvB.39.6279W
- S.H. Wei A. Zunger 1989 Phys. Rev. B 39 6279 10.1103/PhysRevB.39.6279 1989PhRvB..39.6279W
- (1989) Phys. Rev. B , vol.39 , pp. 6279
- Wei, S.H.¹ Zunger, A.²

13
- 0001385882
- 10.1103/PhysRevB.55.13605 1:CAS:528:DyaK2sXjslCqt7w%3D 1997PhRvB.5513605W
- S.H. Wei A. Zunger 1997 Phys. Rev. B 55 13605 10.1103/PhysRevB.55.13605 1:CAS:528:DyaK2sXjslCqt7w%3D 1997PhRvB..5513605W
- (1997) Phys. Rev. B , vol.55 , pp. 13605
- Wei, S.H.¹ Zunger, A.²

14
- 33748960798
- 10.1103/PhysRevB.1.3351 1970PhRvB.1.3351V
- J.A. Van Vechten T.K. Bergstresser 1970 Phys. Rev. B 1 3351 10.1103/PhysRevB.1.3351 1970PhRvB...1.3351V
- (1970) Phys. Rev. B , vol.1 , pp. 3351
- Van Vechten, J.A.¹ Bergstresser, T.K.²

15
- 0000954431
- 10.1103/PhysRevB.25.6367 1:CAS:528:DyaL38XksVCmu7s%3D 1982PhRvB.25.6367K
- A. Kobayashi O.F. Sankey J.D. Dow 1982 Phys. Rev. B 25 6367 10.1103/PhysRevB.25.6367 1:CAS:528:DyaL38XksVCmu7s%3D 1982PhRvB..25.6367K
- (1982) Phys. Rev. B , vol.25 , pp. 6367
- Kobayashi, A.¹ Sankey, O.F.² Dow, J.D.³

16
- 0001194161
- 10.1103/PhysRevB.51.16891 1995PhRvB.5116891O
- D. Olguín R. Baquero 1995 Phys. Rev. B 51 16891 10.1103/PhysRevB.51.16891 1995PhRvB..5116891O
- (1995) Phys. Rev. B , vol.51 , pp. 16891
- Olguín, D.¹ Baquero, R.²

17
- 0034187066
- 10.1006/spmi.2000.0862 1:CAS:528:DC%2BD3cXkvVWqsr8%3D 2000SuMi.27.519K
- G. Klimeck R.C. Bowen T.B. Boykin T.A. Cwik 2000 Superlatt. Microstruct. 27 519 10.1006/spmi.2000.0862 1:CAS:528:DC%2BD3cXkvVWqsr8%3D 2000SuMi...27..519K
- (2000) Superlatt. Microstruct. , vol.27 , pp. 519
- Klimeck, G.¹ Bowen, R.C.² Boykin, T.B.³ Cwik, T.A.⁴

18
- 33646525840
- 10.1103/PhysRevB.34.5992 1:CAS:528:DyaL2sXjvVKnsQ%3D%3D 1986PhRvB.34.5992B
- J.E. Bernard A. Zunger 1986 Phys. Rev. B 34 5992 10.1103/PhysRevB.34.5992 1:CAS:528:DyaL2sXjvVKnsQ%3D%3D 1986PhRvB..34.5992B
- (1986) Phys. Rev. B , vol.34 , pp. 5992
- Bernard, J.E.¹ Zunger, A.²

19
- 27844527453
- First-principle calculations of the linear and nonlinear optical response for GaX (X = As, Sb, P)
- DOI 10.1140/epjb/e2005-00364-3
- A.H. Reshak 2005 Eur. Phys. J. B 47 503 10.1140/epjb/e2005-00364-3 1:CAS:528:DC%2BD2MXhtlGms73N 2005EPJB...47..503R (Pubitemid 41660745)
- (2005) European Physical Journal B , vol.47 , Issue.4 , pp. 503-508
- Reshak, A.H.¹

20
- 0003903935
- McGraw-Hill New York
- J. Singh, Physics of Semiconductors and Their Heterostructures (New York: McGraw-Hill, 1993).
- (1993) Physics of Semiconductors and Their Heterostructures
- Singh, J.¹

21
- 0942267469
- 10.1063/1.1638879 2004ApPhL.84.67S
- W. Sham W. Walukiewicz J.W. Ager K.M. Yu J. Wu E. Haller 2004 Appl. Phys. Lett. 84 67 10.1063/1.1638879 2004ApPhL..84...67S
- (2004) Appl. Phys. Lett. , vol.84 , pp. 67
- Sham, W.¹ Walukiewicz, W.² Ager, J.W.³ Yu, K.M.⁴ Wu, J.⁵ Haller, E.⁶

22
- 0000056149
- 10.1088/0953-8984/7/14/017 1:CAS:528:DyaK2MXltFGgt7o%3D 1995JPCM.7.2783P
- H.C. Poon Z.C. Feng Y.P. Feng M.F. Li 1995 J. Phys.: Condens. Matter. 7 2783 10.1088/0953-8984/7/14/017 1:CAS:528:DyaK2MXltFGgt7o%3D 1995JPCM....7.2783P
- (1995) J. Phys.: Condens. Matter. , vol.7 , pp. 2783
- Poon, H.C.¹ Feng, Z.C.² Feng, Y.P.³ Li, M.F.⁴

23
- 15944403177
- E. Campo, T. Hierl, and J. Hwang, Proc. SPIE 5564, 86 (2004).
- (2004) Proc. SPIE , vol.5564 , pp. 86
- Campo, E.¹ Hierl, T.² Hwang, J.³

24
- 0001428924
- Calculated natural band offsets of all II-VI and III-V semiconductors: Chemical trends and the role of cation d orbitals
- DOI 10.1063/1.121249, PII S0003695198033166
- S.-H. Wei A. Zunger 1998 Appl. Phys. Lett. 72 2011 10.1063/1.121249 1:CAS:528:DyaK1cXisValtLk%3D 1998ApPhL..72.2011W (Pubitemid 128671321)
- (1998) Applied Physics Letters , vol.72 , Issue.16 , pp. 2011-2013
- Wei, S.-H.¹ Zunger, A.²

25
- 1842816907
- 10.1103/PhysRevB.13.5188 418801 1976PhRvB.13.5188M
- H.J. Monkhorst J.P. Pack 1976 Phys. Rev. B 13 5188 10.1103/PhysRevB.13. 5188 418801 1976PhRvB..13.5188M
- (1976) Phys. Rev. B , vol.13 , pp. 5188
- Monkhorst, H.J.¹ Pack, J.P.²

26
- 0003417617
- ed. K. Schwarz (Wien, Austria: Techn. Universitat)
- P. Blaha, K. Schwarz, G. Madsen, D. Kvasnicka, and J. Luitz, WIEN2K, An Augmented Plane Wave + Local Orbitals Program for Calculating Crystal Properties, ed. K. Schwarz (Wien, Austria: Techn. Universitat, 2001).
- (2001) WIEN2K, An Augmented Plane Wave + Local Orbitals Program for Calculating Crystal Properties
- Blaha, P.¹ Schwarz, K.² Madsen, G.³ Kvasnicka, D.⁴ Luitz, J.⁵

27
- 4243943295
- 10.1103/PhysRevLett.77.3865 1:CAS:528:DyaK28XmsVCgsbs%3D 10062328 1996PhRvL.77.3865P
- J.P. Perdew S. Burke M. Ernzerhof 1996 Phys. Rev. Lett. 77 3865 10.1103/PhysRevLett.77.3865 1:CAS:528:DyaK28XmsVCgsbs%3D 10062328 1996PhRvL..77.3865P
- (1996) Phys. Rev. Lett. , vol.77 , pp. 3865
- Perdew, J.P.¹ Burke, S.² Ernzerhof, M.³

28
- 0030107348
- Force calculation and atomic-structure optimization for the full-potential linearized augmented plane-wave code WIEN
- DOI 10.1016/0010-4655(95)00139-5
- B. Kohler S. Wilke M. Scheffler R. Kouba C. Ambrosch-Draxl 1996 Comput. Phys. Commun. 94 31 10.1016/0010-4655(95)00139-5 1:CAS:528:DyaK28XhsFOhtL0%3D 1996CoPhC..94...31K (Pubitemid 126343103)
- (1996) Computer Physics Communications , vol.94 , Issue.1 , pp. 31-48
- Kohler, B.¹ Wilke, S.² Scheffler, M.³ Kouba, R.⁴ Ambrosch-Draxl, C.⁵

29
- 84892338331
- Kluwer Boston
- J. Singh and L. Nordstrom, Planewaves, Pseudopotentials and the LAPW Method (Boston: Kluwer, 2006).
- (2006) Planewaves, Pseudopotentials and the LAPW Method
- Singh, J.¹ Nordstrom, L.²

30
- 0003464333
- Freeman San Francisco
- W. Harrison, Electronic Structure and Properties of Solids: The Physics of Chemical Bonds (San Francisco: Freeman, 1980).
- (1980) Electronic Structure and Properties of Solids: The Physics of Chemical Bonds
- Harrison, W.¹

31
- 0007328673
- 10.1021/ja01348a011 1:CAS:528:DyaA38XltlWrsQ%3D%3D
- L. Pauling 1932 J. Am. Chem. Soc. 54 3570 10.1021/ja01348a011 1:CAS:528:DyaA38XltlWrsQ%3D%3D
- (1932) J. Am. Chem. Soc. , vol.54 , pp. 3570
- Pauling, L.¹

32
- 84864155937
- the free encyclopedia
- Wikipedia, the free encyclopedia: http://www.en.wikipedia.org/wiki/Main- Page.

33
- 0033431538
- 1:CAS:528:DyaK1MXjvFKrtrw%3D
- J.H. Chang M.W. Cho H. Makino T. Sekiguchi T. Yao 1999 J. Korean Phys. Soc. 34 S4 1:CAS:528:DyaK1MXjvFKrtrw%3D
- (1999) J. Korean Phys. Soc. , vol.34 , pp. 4
- Chang, J.H.¹ Cho, M.W.² Makino, H.³ Sekiguchi, T.⁴ Yao, T.⁵

34
- 0034245890
- 10.1103/PhysRevLett.85.1552 1:CAS:528:DC%2BD3cXls1WqsL4%3D 10970552 2000PhRvL.85.1552W
- W. Walukiewicz W. Shan K.M. Yu J.W. Ager III E.E. Haller I. Miotkowski M.J. Seong H. Alawadhi A.K. Ramdas 2000 Phys. Rev. Lett. 85 1552 10.1103/PhysRevLett.85.1552 1:CAS:528:DC%2BD3cXls1WqsL4%3D 10970552 2000PhRvL..85.1552W
- (2000) Phys. Rev. Lett. , vol.85 , pp. 1552
- Walukiewicz, W.¹ Shan, W.² Yu, K.M.³ Ager Iii, J.W.⁴ Haller, E.E.⁵ Miotkowski, I.⁶ Seong, M.J.⁷ Alawadhi, H.⁸ Ramdas, A.K.⁹

35
- 0036637768
- 10.1007/s11664-002-0232-2 1:CAS:528:DC%2BD38XlsFCgs7o%3D 2002JEMat.31.754Y
- K.M. Yu J. Wu W. Walukiewicz J.W. Ager E.E. Haller I. Miotkowski A. Ramdas 2002 J. Electron. Mater. 31 754 10.1007/s11664-002-0232-2 1:CAS:528:DC%2BD38XlsFCgs7o%3D 2002JEMat..31..754Y
- (2002) J. Electron. Mater. , vol.31 , pp. 754
- Yu, K.M.¹ Wu, J.² Walukiewicz, W.³ Ager, J.W.⁴ Haller, E.E.⁵ Miotkowski, I.⁶ Ramdas, A.⁷

36
- 0036684031
- 10.1088/0268-1242/17/8/315 1:CAS:528:DC%2BD38Xms1yqurY%3D 2002SeScT.17.860W
- J. Wu W. Shan W. Walukiewicz 2002 Semicond. Sci. Technol. 17 860 10.1088/0268-1242/17/8/315 1:CAS:528:DC%2BD38Xms1yqurY%3D 2002SeScT..17..860W
- (2002) Semicond. Sci. Technol. , vol.17 , pp. 860
- Wu, J.¹ Shan, W.² Walukiewicz, W.³

37
- 67649285657
- 10.1016/j.jallcom.2009.02.150 1:CAS:528:DC%2BD1MXnt1alu74%3D
- N. Tit I.M. Obaidat H. Alawadhi 2009 J. Alloys Compd. 481 340 10.1016/j.jallcom.2009.02.150 1:CAS:528:DC%2BD1MXnt1alu74%3D
- (2009) J. Alloys Compd. , vol.481 , pp. 340
- Tit, N.¹ Obaidat, I.M.² Alawadhi, H.³

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