Large configuration-induced band-gap fluctuations in GaNxAs 1-x alloys

Journal of Physics D: Applied Physics

Volumn 39, Issue 12, 2006, Pages 2514-2521

  Tit, Nacir ^a,b  

^a ABDUS SALAM INTERNATIONAL CENTRE FOR THEORETICAL PHYSICS   (Italy)

^b UNITED ARAB EMIRATES UNIVERSITY   (United Arab Emirates)

Author keywords

[No Author keywords available]

Indexed keywords

BAND STRUCTURE; COMPUTATIONAL METHODS; ENERGY GAP; PHOTOLUMINESCENCE; SEMICONDUCTING GALLIUM ARSENIDE;

CONDUCTION BAND EDGE; MAXIMALLY AS-CLUSTERED (MASC) CONFIGURATION; MOLE FRACTION; VALENCE-BAND EDGE;

GALLIUM NITRIDE;

EID: 33744954220     PISSN: 00223727     EISSN: 13616463     Source Type: Journal    
DOI: 10.1088/0022-3727/39/12/008     Document Type: Article

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