Comparison of cathodoluminescence and photoluminescence of CdSeTe films grown on Si by molecular beam epitaxy

Proceedings of SPIE - The International Society for Optical Engineering

Volumn 5564, Issue , 2004, Pages 86-91

  Campo, Eva M ^a   Hierl, Thomas ^a   Hwang, James C M ^a   Chen, Yuanping ^b   Brill, Gregory ^b   Dhar, Nibir K ^b  

^a LEHIGH UNIVERSITY   (United States)

^b U S ARMY RESEARCH LABORATORY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

BAND GAP ENERGY; BULK CRYSTAL; COMPOSITE SUBSTRATES; PSEUDOPOTENTIAL CALCULATION;

CATHODOLUMINESCENCE; CRYSTALS; ELECTROMAGNETIC WAVE DIFFRACTION; FILM GROWTH; FOURIER TRANSFORM INFRARED SPECTROSCOPY; MOLECULAR BEAM EPITAXY; PHOTOLUMINESCENCE; POLYCRYSTALLINE MATERIALS; RUTHERFORD BACKSCATTERING SPECTROSCOPY; SELENIUM; SILICON; THIN FILMS; X RAY DIFFRACTION;

CADMIUM COMPOUNDS;

EID: 15944403177     PISSN: 0277786X     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1117/12.567430     Document Type: Conference Paper

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