Nitride based nanotransistors as new sources and detectors of THz radiations

Physica Status Solidi (C) Current Topics in Solid State Physics

Volumn 5, Issue 6, 2008, Pages 1947-1949

  El Fatimy, A ^a   Teppe, F ^a   Boubanga, S ^a   Dyakonova, N ^a   Gil, B ^a   Coquillat, D ^a   Seliuta, D ^b   Valusis G ^b   Poisson, M A ^c   Morvan, E ^c   Gaquiere, Ch ^d   Theron, D ^d   Cappy, A ^d   Knap, W ^a  

^a UNIVERSITÉ MONTPELLIER 2   (France)

^b CENTER FOR PHYSICAL SCIENCES AND TECHNOLOGY   (Lithuania)

^c THALES RESEARCH AND TECHNOLOGY   (France)

^d INSTITUT D ELECTRONIQUE   (France)

Author keywords

[No Author keywords available]

Indexed keywords

GATE LENGTH; LINEAR DISPERSION; NANO TRANSISTORS; NEW SOURCES; RESONATOR CAVITIES; ROOM TEMPERATURE; SOUND WAVES; TERAHERTZ RANGE; THZ EMISSION; THZ RADIATION; TRANSISTOR CHANNELS;

DETECTORS; ELECTRON GAS; FIELD EFFECT TRANSISTORS; GALLIUM NITRIDE; GATES (TRANSISTOR); HIGH ELECTRON MOBILITY TRANSISTORS; MAGNETOHYDRODYNAMICS; PLASMA WAVES; TWO DIMENSIONAL ELECTRON GAS;

TERAHERTZ WAVES;

EID: 77951243950     PISSN: 18626351     EISSN: 16101642     Source Type: Journal    
DOI: 10.1002/pssc.200778507     Document Type: Conference Paper

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