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Volumn 5, Issue 6, 2008, Pages 1491-1494

Pulsed layer growth of AlInGaN nanostructures

Author keywords

[No Author keywords available]

Indexed keywords

ALINGAN; DEPOSITED MATERIALS; ELEVATED TEMPERATURE; HIGH QUALITY; INTERNAL ELECTRIC FIELDS; LAYER GROWTH; MATERIAL PROPERTY; METAL-ORGANIC VAPOR PHASE EPITAXY; PL INTENSITY; PL SPECTRA; RESONANCE LINE; TIME-RESOLVED; WELL THICKNESS; XRD;

EID: 77951240640     PISSN: 18626351     EISSN: 16101642     Source Type: Journal    
DOI: 10.1002/pssc.200778412     Document Type: Conference Paper
Times cited : (3)

References (15)


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.