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Volumn 5, Issue 6, 2008, Pages 1491-1494
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Pulsed layer growth of AlInGaN nanostructures
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Author keywords
[No Author keywords available]
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Indexed keywords
ALINGAN;
DEPOSITED MATERIALS;
ELEVATED TEMPERATURE;
HIGH QUALITY;
INTERNAL ELECTRIC FIELDS;
LAYER GROWTH;
MATERIAL PROPERTY;
METAL-ORGANIC VAPOR PHASE EPITAXY;
PL INTENSITY;
PL SPECTRA;
RESONANCE LINE;
TIME-RESOLVED;
WELL THICKNESS;
XRD;
CRYSTAL GROWTH;
ELECTRIC FIELDS;
LIGHT;
NANOSTRUCTURES;
NITRIDES;
PHASE INTERFACES;
PHOTOLUMINESCENCE SPECTROSCOPY;
SEMICONDUCTOR GROWTH;
SEMICONDUCTOR QUANTUM WELLS;
X RAY DIFFRACTION;
METALLORGANIC VAPOR PHASE EPITAXY;
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EID: 77951240640
PISSN: 18626351
EISSN: 16101642
Source Type: Journal
DOI: 10.1002/pssc.200778412 Document Type: Conference Paper |
Times cited : (3)
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References (15)
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