Pulse-mode selective metal-organic vapor phase epitaxy method for migration enhancement and high-quality strained InGaAsP multi-quantum well structure

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 38, Issue 3 A, 1999, Pages 1334-1338

  Sakata, Yasutaka ^a   Komatsu, Keiro ^a  

^a NEC CORPORATION   (Japan)

Author keywords

Laser diode; Migration; MOVPE; Pulse mode epitaxy; Selective epitaxy; Strained MQW

Indexed keywords

CRYSTAL STRUCTURE; DECOMPOSITION; DIFFUSION; ELECTRIC CURRENT MEASUREMENT; METALLORGANIC VAPOR PHASE EPITAXY; NUMERICAL METHODS; PHOTOLUMINESCENCE; SCANNING ELECTRON MICROSCOPY; SEMICONDUCTING INDIUM COMPOUNDS; SEMICONDUCTOR LASERS; SPECTRUM ANALYSIS;

PULSE MODE SELECTIVE EPITAXY; THRESHOLD CURRENT;

SEMICONDUCTOR QUANTUM WELLS;

EID: 0032669867     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/jjap.38.1334     Document Type: Article

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