Preparation and characterization of TiO2 thin films grown by RF magnetron sputtering

Physica Status Solidi (C) Current Topics in Solid State Physics

Volumn 5, Issue 10, 2008, Pages 3368-3372

  Selmi, M ^a   Chaabouni, F ^a   Abaab, M ^a   Rezig, B ^a  

^a UNIVERSITY OF TUNIS EL MANAR   (Tunisia)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING EFFECTS; ANNEALING TEMPERATURES; ARGON FLOW RATE; ATOMIC FORCE MICROSCOPES; CRYSTALLINE STRUCTURE; DIRECT BAND GAP; HIGH TRANSMISSION; REACTIVE OXYGEN; RF-MAGNETRON SPUTTERING; RF-POWER; RF-SPUTTERING; ROOM TEMPERATURE; SILICON SUBSTRATES; SPUTTERING PARAMETERS; STRUCTURAL AND OPTICAL PROPERTIES; TIO; UV-VIS-NIR SPECTROPHOTOMETERS; VISIBLE REGION; X RAY DIFFRACTOMETERS;

ANNEALING; ARGON; CRYSTAL ATOMIC STRUCTURE; MAGNETRON SPUTTERING; OXYGEN; REFRACTIVE INDEX; SEMICONDUCTOR DEVICE MANUFACTURE; SEMICONDUCTOR LASERS; SEMICONDUCTOR SWITCHES; TECHNICAL PRESENTATIONS; TITANIUM; TITANIUM DIOXIDE; X RAY DIFFRACTION;

THIN FILMS;

EID: 77951175505     PISSN: 18626351     EISSN: 16101642     Source Type: Journal    
DOI: 10.1002/pssc.200778921     Document Type: Conference Paper

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