Mechanism of carrier transport across the junction of narrow band-gap planar n+ p HgCdTe photodiodes grown by liquid-phase epitaxy

Journal of Applied Physics

Volumn 98, Issue 5, 2005, Pages

  Zemel, A ^a   Lukomsky, I ^a   Weiss, E ^a  

^a SCD Semiconductor Devices Ltd   (Israel)

Author keywords

[No Author keywords available]

Indexed keywords

BAND GAPS; CARRIER TRANSPORT; P-N JUNCTIONS; TUNNELING CURRENT;

CURRENT VOLTAGE CHARACTERISTICS; ELECTRIC CURRENTS; ELECTRIC POTENTIAL; ELECTRIC RESISTANCE; ELECTRON TUNNELING; FABRICATION; LIQUID PHASE EPITAXY; MATHEMATICAL MODELS; MERCURY COMPOUNDS; SEMICONDUCTOR JUNCTIONS;

PHOTODIODES;

EID: 25144489039     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1968428     Document Type: Article

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