|
Volumn , Issue , 2009, Pages 38-43
|
Piezoresistive effect in silicon nanowires - A comprehensive analysis based on first-principles calculations
a a a a a |
Author keywords
[No Author keywords available]
|
Indexed keywords
BAND DIAGRAMS;
BAND ENERGY;
CARRIER CONDUCTIVITY;
CARRIER DENSITY;
COMPREHENSIVE ANALYSIS;
EFFECTIVE MASS;
FIRST-PRINCIPLES;
FIRST-PRINCIPLES CALCULATION;
HOLE CONDUCTIVITY;
HYDROGEN TERMINATION;
LONGITUDINAL DIRECTION;
MECHANICAL STRAIN;
P-TYPE;
PIEZO-RESISTORS;
PIEZORESISTANCE COEFFICIENTS;
PIEZORESISTIVE EFFECTS;
PIEZORESISTIVITY;
SILICON NANOWIRES;
SINGLE CRYSTAL SILICON;
SUB-BANDS;
SUDDEN CHANGE;
CRYSTAL ORIENTATION;
EMPLOYMENT;
HOLE MOBILITY;
MODEL STRUCTURES;
NANOWIRES;
PHOSPHORUS;
SOCIAL SCIENCES;
WIRE;
DANGLING BONDS;
|
EID: 77950932996
PISSN: None
EISSN: None
Source Type: Conference Proceeding
DOI: 10.1109/MHS.2009.5352099 Document Type: Conference Paper |
Times cited : (8)
|
References (16)
|