Advantages of inductively coupled plasma-assisted sputtering for preparation of stoichiometric VO2 films with metal-insulator transition

Thin Solid Films

Volumn 516, Issue 11, 2008, Pages 3572-3576

  Nihei, Yusuke ^a   Sasakawa, Yusuke ^a   Okimura, Kunio ^a  

^a TOKAI UNIVERSITY   (Japan)

Author keywords

Inductively coupled plasma assisted sputtering; Low temperature growth; Metal insulator phase transition; Resistivity change; VO2 film

Indexed keywords

PHASE TRANSITIONS; PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION; REACTIVE SPUTTERING;

METAL-INSULATOR PHASE TRANSITION; RESISTIVITY CHANGE;

INDUCTIVELY COUPLED PLASMA;

EID: 40649094753     PISSN: 00406090     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.tsf.2007.08.085     Document Type: Article

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