메뉴 건너뛰기




Volumn 15, Issue 4, 2009, Pages 1122-1127

Partial polarization matching in GaInN-based multiple quantum well blue LEDs using ternary GaInN barriers for a reduced efficiency droop

Author keywords

Electroluminescence; Light emitting diodes; Quantum wells

Indexed keywords

BLUE LEDS; BLUE SHIFT; ELECTRON LEAKAGE; FORWARD VOLTAGE; GAINN/GAN MQW; HETERO-INTERFACES; HIGH INJECTION; IDEALITY FACTORS; INJECTION CURRENTS; INTERNAL POLARIZATION FIELDS; LIGHT OUTPUT POWER; MULTIPLE QUANTUM WELLS; PARTIAL POLARIZATION; POLARIZATION MATCHING; QUANTUM BARRIERS; QUANTUM WELLS; SHEET CHARGES;

EID: 70349327704     PISSN: 1077260X     EISSN: None     Source Type: Journal    
DOI: 10.1109/JSTQE.2009.2014395     Document Type: Article
Times cited : (15)

References (12)
  • 1
    • 33745616096 scopus 로고    scopus 로고
    • Analysis of the cause of the decrease in the electroluminescence efficiency of AlGaInN light-emitting-diode heterostructures at high pumping density
    • I. V. Rozhansky and D. A. Zakheim, "Analysis of the cause of the decrease in the electroluminescence efficiency of AlGaInN light-emitting-diode heterostructures at high pumping density," Semiconductors, vol.40, no.7, pp. 839-845, 2006.
    • (2006) Semiconductors , vol.40 , Issue.7 , pp. 839-845
    • Rozhansky, I.V.1    Zakheim, D.A.2
  • 2
    • 52949131872 scopus 로고    scopus 로고
    • On thëefficiency droop in InGaN multiple quantum well blue light emitting diodes and its reduction with p-doped quantum well barriers
    • J. Xie, X. Ni, Q. Fan, R. Shimada, U.Özg ür, and H. Morkoç, "On thë efficiency droop in InGaN multiple quantum well blue light emitting diodes and its reduction with p-doped quantum well barriers," Appl. Phys. Lett., vol.93, pp. 121107-121109, 2008.
    • (2008) Appl. Phys. Lett. , vol.93 , pp. 121107-121109
    • Xie, J.1    Ni, X.2    Fan, Q.3    Shimada, R.4    Morkoc, H.5
  • 6
    • 37149027248 scopus 로고    scopus 로고
    • Blue-emitting InGaN-GaN double-heterostructure light-emitting diodes reaching maximum quantum efficiency above 200 A/cm2
    • N. F. Gardner, G. O. Muller, Y. C. Shen, G. Chen, S. Watanabe, W. Götz, and M. R. Krames, "Blue-emitting InGaN-GaN double- heterostructure light-emitting diodes reaching maximum quantum efficiency above 200 A/cm2 ," Appl. Phys. Lett., vol.91, pp. 243506-243508, 2007.
    • (2007) Appl. Phys. Lett. , vol.91 , pp. 243506-243508
    • Gardner, N.F.1    Muller, G.O.2    Shen, Y.C.3    Chen, G.4    Watanabe, S.5    Götz, W.6    Krames, M.R.7
  • 8
    • 35648955103 scopus 로고    scopus 로고
    • Defect related issues in the "current roll-off" in InGaN based light emitting diodes
    • B. Monemar and B. E. Sernelius, "Defect related issues in the "current roll-off" in InGaN based light emitting diodes," Appl. Phys. Lett., vol. 91, pp. 181103-181105, 2007.
    • (2007) Appl. Phys. Lett. , vol.91 , pp. 181103-181105
    • Monemar, B.1    Sernelius, B.E.2
  • 11
    • 11044234356 scopus 로고    scopus 로고
    • Nonpolar InGaN/GaN emitters on reduced-defect lateral epitaxially overgrown a-plane GaN with drive-current-independent electroluminescence emission peak
    • A. Chakraborty, B. A. Haskell, S. Keller, J. S. Speck, S. P. DenBaars, S. Nakamura, and U. K. Mishra, "Nonpolar InGaN/GaN emitters on reduced-defect lateral epitaxially overgrown a-plane GaN with drive-current-independent electroluminescence emission peak," Appl. Phys. Lett., vol.85, pp. 5143-5145, 2004.
    • (2004) Appl. Phys. Lett. , vol.85 , pp. 5143-5145
    • Chakraborty, A.1    Haskell, B.A.2    Keller, S.3    Speck, J.S.4    Denbaars, S.P.5    Nakamura, S.6    Mishra, U.K.7


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.