SCOPUS 정보 검색 플랫폼

Journal of Crystal Growth

Volumn 251, Issue 1-4, 2003, Pages 628-632

Doping effects in ZnO layers using Li3N as a doping source

(4) Ko, Hang Ju a Chen, Yefan b Hong, Soon Ku c Yao, Takafumi a

a TOHOKU UNIVERSITY (Japan)

b LUCENT TECHNOLOGIES (United States)

c Brown University (United States)

Author keywords

A1. Doping; A3. Molecular beam epitaxy; B1. Li; B1. Li3N; B1. ZnO

Indexed keywords

ATOMIC FORCE MICROSCOPY; DECOMPOSITION; ELECTRIC CONDUCTIVITY; ELECTRON EMISSION; EXCITONS; IMPULSE NOISE; LITHIUM NIOBATE; MOLECULAR BEAM EPITAXY; PHOTOLUMINESCENCE; SEGREGATION (METALLOGRAPHY); SEMICONDUCTOR GROWTH; ZINC OXIDE;

PLASMA ASSISTED MOLECULAR BEAM EPITAXY (P-MBE);

SEMICONDUCTOR DOPING;

EID: 0037382874 PISSN: 00220248 EISSN: None Source Type: Journal
DOI: 10.1016/S0022-0248(03)00830-3 Document Type: Conference Paper

Times cited : (10)

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