Infrared characterization of interfacial Si-O bond formation on silanized flat SiO2/Si Surfaces

Langmuir

Volumn 26, Issue 7, 2010, Pages 4563-4566

  Tian, Ruhai ^a,b   Seitz, Oliver ^b   Li, Meng ^c   Hu, Wenchuang ^b   Chabal, Yves J ^b   Gao, Jinming ^a  

^a UNIVERSITY OF TEXAS AT DALLAS   (United States)

^b The University of Texas at Dallas   (United States)

^c RUTGERS UNIVERSITY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

BLUE SHIFT; BOND FORMATION; BONDING INTERFACES; CHEMICAL FUNCTIONALIZATION; DIRECT MEASURES; HIGH QUALITY; INFRARED CHARACTERIZATION; INTERFACIAL BONDS; IR ABSORPTION INTENSITY; LO PHONONS; LONGITUDINAL OPTICAL PHONONS; SAM FORMATION; SELF ASSEMBLY PROCESS; SENSOR APPLICATIONS; SI SURFACES; SILANIZATIONS; SPECTRAL POSITION;

CHEMICAL BONDS; CUSTOMER SATISFACTION; FUNCTIONAL GROUPS; MOLECULES; PHONONS; SELF ASSEMBLED MONOLAYERS; SILICON; SILICON COMPOUNDS; TOTAL QUALITY MANAGEMENT;

SILICON OXIDES;

EID: 77950549024     PISSN: 07437463     EISSN: 15205827     Source Type: Journal    
DOI: 10.1021/la904597c     Document Type: Article

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