Round-robin study of arsenic implant dose measurement in silicon by SIMS

Applied Surface Science

Volumn 252, Issue 19, 2006, Pages 7232-7235

  Simons, D ^a   Kim, K ^b   Benbalagh, R ^c   Bennett, J ^d   Chew, A ^e   Gehre, D ^f   Hasegawa, T ^g   Hitzman, C ^h   Ko, J ⁱ   Lindstrom, R ^a   MacDonald, B ^j   Magee, C ^k   Montgomery, N ^l   Peres, P ^c   Ronsheim, P ^m   Yoshikawa, S ⁿ   Schuhmacher, M ^c   Stockwell, W ^j   Sykes, D ^e   Tomita, M ^o   Toujou, F ⁿ   Won, J ^p   more..

^a NATIONAL INSTITUTE OF STANDARDS AND TECHNOLOGY   (United States)

^b Korea Research Institute of Standards and Science   (South Korea)

^c CAMECA   (United States)

^d ATDF   (United States)

^e Loughborough Surface Analysis Ltd   (United Kingdom)

^f AMD   (Germany)

^g TORAY RESEARCH CENTER INC   (Japan)

^h Full Wafer Analysis   (United States)

ⁱ Hynix Semiconductor Inc   (South Korea)

^j Submicron Development Center   (United States)

^k Evans East   (United States)

^l Cascade Scientific Ltd   (United Kingdom)

^m IBM MICROELECTRONICS   (United States)

ⁿ PANASONIC CORPORATION   (Japan)

^o TOSHIBA CORPORATION   (Japan)

^p Samsung Advanced Institute of Technology (SAIT)   (South Korea)

more..

Author keywords

Arsenic; INAA; LEXES; Matrix normalization; SIMS

Indexed keywords

ARSENIC; NEUTRON ACTIVATION ANALYSIS; SECONDARY ION MASS SPECTROMETRY; SILICON; STATISTICAL METHODS;

INSTRUMENTAL NEUTRON ACTIVATION ANALYSIS (INAA); LOW ENERGY ELECTRON-INDUCED X-RAY EMISSION SPECTROMETRY (LEXES); MATRIX NORMALIZATION; REFERENCE MATERIALS;

IMPLANTS (SURGICAL);

EID: 33747178712     PISSN: 01694332     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.apsusc.2006.02.152     Document Type: Article

References (3)

1. C.W. Magee, unpublished results.
2. Chi P.H., Simons D.S., McKinley J.M., Stevie F.A., and Granger C.N. J. Vac. Sci. Technol. A 20 (2002) 688-692
3. Tomita M., et al. Appl. Surf. Sci. 203/204 (2003) 465-469