Low temperature onset for thermionic emitters based on nitrogen incorporated UNCD films

Diamond and Related Materials

Volumn 18, Issue 2-3, 2009, Pages 232-234

  Koeck, Franz A M ^a   Nemanich, Robert J ^a  

^a ARIZONA STATE UNIVERSITY   (United States)

Author keywords

Chemical vapor deposition; Diamond growth; Doping; Field emission

Indexed keywords

CHEMICAL VAPOR DEPOSITION; DIAMOND CUTTING TOOLS; DIAMONDS; DIRECT ENERGY CONVERSION; DOPING (ADDITIVES); ELECTRON AFFINITY; ELECTRON EMISSION; ELECTRONS; ENERGY CONVERSION; ENERGY TRANSFER; EPITAXIAL GROWTH; FIELD EMISSION; GROWTH (MATERIALS); HYDROGEN; MICROWAVES; NITROGEN; NONMETALS; NUCLEATION; PROBABILITY DENSITY FUNCTION; THERMIONIC EMISSION; VAPORS; WORK FUNCTION;

DIAMOND GROWTH; DOPED-DIAMOND FILMS; DOPING; EFFECTIVE WORK FUNCTIONS; EMISSION BARRIERS; HYDROGEN TERMINATIONS; LOW TEMPERATURES; MICROWAVE PLASMAS; NEGATIVE ELECTRON AFFINITIES; NITROGEN-DOPED DIAMONDS; NUCLEATION LAYERS; RICHARDSON CONSTANTS; RICHARDSON-DUSHMAN EQUATIONS; SPACE PROPULSIONS; SURFACE CHARACTERISTICS; THERMIONIC ELECTRON EMISSIONS; THERMIONIC EMITTERS; ULTRA-NANOCRYSTALLINE DIAMONDS;

DIAMOND FILMS;

EID: 59649096257     PISSN: 09259635     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.diamond.2008.11.023     Document Type: Article

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