Influence of nitrogen doping on growth rate and texture evolution of chemical vapor deposition diamond films

Applied Physics Letters

Volumn 94, Issue 2, 2009, Pages

  Raabe, D ^a   Liu, T ^a  

^a MAX PLANCK INSTITUT FÜR EISENFORSCHUNG GMBH   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

BACKSCATTERING; CHEMICAL VAPOR DEPOSITION; DIAMOND FILMS; FLOW OF GASES; NITROGEN; SEMICONDUCTOR DOPING; TEXTURES;

CHEMICAL VAPOR DEPOSITION DIAMOND; CHEMICAL VAPOR DEPOSITION DIAMOND FILMS; COMPETITIVE GROWTH; CRYSTALLOGRAPHIC TEXTURES; ELECTRON BACKSCATTERING DIFFRACTION; NITROGEN ADDITIONS; POLYCRYSTALLINE DIAMOND FILMS; STRONG ENHANCEMENT;

GROWTH RATE;

EID: 58349115715     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.3072601     Document Type: Article

References (22)

1. J. Mort, M. A. Machonkin, and K. Okumura, Appl. Phys. Lett. 0003-6951 10.1063/1.105767 59, 3148 (1991).
2. E. Boettger, A. Bluhm, X. Jiang, L. Schäfer, and C. P. Klages, J. Appl. Phys. 0021-8979 10.1063/1.359103 77, 6332 (1995).
3. S. Jin and T. D. Moustakas, Appl. Phys. Lett. 0003-6951 10.1063/1.112315 65, 403 (1994).
4. S. Bohr, R. Haubner, and B. Lux, Appl. Phys. Lett. 0003-6951 10.1063/1.115717 68, 1075 (1996).
5. R. Locher, C. Wild, N. Herres, D. Behr, and P. Koidl, Appl. Phys. Lett. 0003-6951 10.1063/1.113064 65, 34 (1994).
6. Y. Avigal, O. Glozman, I. Etsion, G. Halperin, and A. Hoffman, Diamond Relat. Mater. 0925-9635 10.1016/S0925-9635(96)00625-5 6, 381 (1997).
7. A. K. McCurdy, Phys. Rev. B 0163-1829 10.1103/PhysRevB.26.6971 26, 6971 (1982).
8. A. K. McCurdy, H. J. Maris, and C. Elbaum, Phys. Rev. B 2, 4077 (1970).
9. W. Müller-Sebert, E. Wörner, F. Fuchs, C. Wild, and P. Koidl, Appl. Phys. Lett. 0003-6951 10.1063/1.116733 68, 759 (1996).
10. M. Guerino, M. Massi, H. S. Maciel, C. Otani, R. D. Mansano, P. Verdonck, and J. Libardi, Diamond Relat. Mater. 13, 316 (2004).
11. K. Kobashi, Diamond Films-Chemical Vapor Deposition for Oriented and Heteroepitaxial Growth (Elsevier, Amsterdam, 2005).
12. J. V. Busch and J. P. Dismukes, Diamond Relat. Mater. 0925-9635 10.1016/0925-9635(94)90175-9 3, 295 (1994).
13. F. X. Lu, W. Z. Tang, T. B. Huang, J. M. Lin, J. H. Song, W. X. Yu, and Y. M. Tong, Diamond Relat. Mater. 10, 1551 (2001).
14. S. Iijima, A. Yumi, and B. Kazuhiro, Appl. Phys. Lett. 0003-6951 10.1063/1.103812 57, 2646 (1990).
15. E. Anger, A. Giequel, Z. Z. Wang, and M. F. Ravet, Diamond Relat. Mater. 0925-9635 10.1016/0925-9635(94)05301-4 4, 759 (1995).
16. EKVICALC 1.21, Svensk EnergiData Agersta, Bälinge, Sweden, 1986.
17. A. van der Drift, Philips Res. Rep. 22, 267 (1967).
18. T. Liu, D. Raabe, and S. Zaefferer, Sci. Technol. Adv. Mater. 9, 035013 (2008). 1468-6996
19. C. J. Tang, A. J. Neves, and A. J. S. Fernandes, Diamond Relat. Mater. 12, 1488 (2003).
20. C. Wild, N. Herres, and P. Koidl, J. Appl. Phys. 0021-8979 10.1063/1.346663 68, 973 (1990).
21. R. E. Clausing, L. Heatherly, L. L. Horton, E. D. Specht, G. M. Begun, and Z. L. Wang, Diamond Relat. Mater. 0925-9635 10.1016/S0925-9635(00)00372-1 1, 411 (1992).
22. D. Meakin, J. Stoemenos, D. Miglierate, and N. A. Economan, J. Appl. Phys. 0021-8979 10.1063/1.338325 61, 5031 (1987).