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Volumn 106, Issue 5, 2009, Pages

The influence of in composition on InGaAs-capped InAs/GaAs quantum-dot infrared photodetectors

Author keywords

[No Author keywords available]

Indexed keywords

BANDGAP SHRINKAGE; CAPPED LAYER; COMPRESSIVE STRAIN; DETECTION WAVELENGTHS; INAS; INAS/GAAS; INFRARED RANGE; QUANTUM-DOT INFRARED PHOTODETECTORS; WAVELENGTH DETECTION;

EID: 70349337788     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.3212983     Document Type: Article
Times cited : (7)

References (12)
  • 11
    • 0001542266 scopus 로고    scopus 로고
    • 0.8As grown on GaAs substrates
    • DOI 10.1063/1.123459, PII S0003695199020082
    • K. Nishi, H. Saito, S. Sugou, and J. S. Lee, Appl. Phys. Lett. 0003-6951 74, 1111 (1999). 10.1063/1.123459 (Pubitemid 129710373)
    • (1999) Applied Physics Letters , vol.74 , Issue.8 , pp. 1111-1113
    • Nishi, K.1    Saito, H.2    Sugou, S.3    Lee, J.-S.4


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.