Control of GaSb/GaAs quantum nanostructures by molecular beam epitaxy

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 43, Issue 4 B, 2004, Pages 2122-2124

  Nakai, Takanori ^a   Iwasaki, Seiki ^a   Yamaguchi, Koichi ^a  

^a UNIVERSITY OF ELECTRO COMMUNICATIONS   (Japan)

Author keywords

GaAs; GaSb; Molecular beam epitaxy; Quantum dot; Quantum well; Reflection high energy electron beam diffraction; Stranski krastanov growth

Indexed keywords

ACTIVATION ENERGY; ANISOTROPY; CRYSTAL LATTICES; INTERFACIAL ENERGY; IRRADIATION; MOLECULAR BEAM EPITAXY; PHOTOLUMINESCENCE; REFLECTION HIGH ENERGY ELECTRON DIFFRACTION; SEMICONDUCTOR QUANTUM DOTS; STRAIN; SUBSTRATES; SURFACE STRUCTURE;

QUANTUM NANOSTRUCTURES; QUANTUM WELL; REFLECTION HIGH-ENERGY ELECTRON-BEAM DIFFRACTION;

NANOSTRUCTURED MATERIALS;

EID: 3142748440     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/JJAP.43.2122     Document Type: Conference Paper

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