Photoreflectance spectroscopic technique: A new model for estimation of plasma-induced defect density in Si substrate

International Symposium on Plasma Process-Induced Damage, P2ID, Proceedings

Volumn , Issue , 1998, Pages 152-155

  Wada, Hideo ^a   Eriguchi, Koji ^a   Fujimoto, Akira ^a   Kanashima, Takashi ^a   Okuyama, Masanori ^a  

^a OSAKA UNIVERSITY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

CRYSTAL DEFECTS; REACTIVE ION ETCHING; ULSI CIRCUITS;

PHOTOREFLECTANCE SPECTROSCOPIC TECHNIQUES; PLASMA INDUCED DEFECT DENSITY;

SILICON WAFERS;

EID: 0032274330     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (9)