Analysis of Si substrate damage induced by inductively coupled plasma reactor with various superposed bias frequencies

Proceedings - 2008 IEEE International Conference on Integrated Circuit Design and Technology, ICICDT

Volumn , Issue , 2008, Pages 101-104

  Nakakubo, Y ^a   Matsuda, A ^a   Kamei, M ^a   Ohta, H ^a   Eriguchi, K ^a   Ono, K ^a  

^a KYOTO UNIVERSITY   (Japan)

Author keywords

Bias frequency; Capacitance voltage; Carrier recombination center; Plasma induced damage; Self bias voltage

Indexed keywords

CIVIL AVIATION; ELECTRIC LOAD MANAGEMENT; ELECTRONICS INDUSTRY; EPITAXIAL GROWTH; ESTIMATION; INDUCTIVELY COUPLED PLASMA; INTEGRATED CIRCUIT MANUFACTURE; INTEGRATED CIRCUITS; OPTIMIZATION; PHOTORESISTS; PLASMA APPLICATIONS; PLASMAS; POWER GENERATION; SILICON; SONOLUMINESCENCE; SPECTROSCOPIC ELLIPSOMETRY; SPONTANEOUS EMISSION; SUBSTRATES; TECHNOLOGY;

BIAS CONFIGURATION; BIAS FREQUENCIES; BIAS FREQUENCY; BIAS POWER; C-V MEASUREMENTS; CAPACITANCE-VOLTAGE; CAPACITANCE-VOLTAGE MEASUREMENTS; CARRIER RECOMBINATION CENTER; INDUCTIVELY COUPLED PLASMA REACTOR; INTEGRATED CIRCUIT DESIGN; INTERFACIAL LAYER; INTERNATIONAL CONFERENCES; OPTICAL MODELLING; PHOTOREFLECTANCE SPECTROSCOPY; PLASMA PROCESSING; PLASMA-INDUCED DAMAGE; SELF-BIAS VOLTAGE; SI SUBSTRATE; SI SURFACE; SITE DENSITY; SPECTROSCOPIC ELLIPSOMETRY (SE); STRUCTURAL STRAIN; SURFACE LAYERING;

COUPLED CIRCUITS;

EID: 51849140425     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/ICICDT.2008.4567256     Document Type: Conference Paper

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