Observation and measurement of negative differential resistance on PtSi schottky junctions on porous silicon

Sensors

Volumn 10, Issue 2, 2010, Pages 1012-1020

  Banihashemian, Seyedeh Maryam ^a   Hajghassem, Hassan ^b   Erfanian, Alireza ^c   Aliahmadi, Majidreza ^d   Mohtashamifar, Mansor ^d   Mosakazemi, Seyed Mohamadhosein ^e  

^a ISLAMIC AZAD UNIVERSITY   (Iran)

^b SHAHID BEHESHTI UNIVERSITY   (Iran)

^c K N TOOSI UNIVERSITY OF TECHNOLOGY   (Iran)

^d Electronic Research Center   (Iran)

^e PAYAME NOOR UNIVERSITY   (Iran)

Author keywords

Nanoporous si; Negative differential resistance; Platinum silicide; Quantum tunneling effect

Indexed keywords

DIFFERENTIAL RESISTANCES; NANO-POROUS; NEGATIVE DIFFERENTIAL RESISTANCES; OBSERVATION AND MEASUREMENT; PLATINUM SILICIDES; POTENTIAL BARRIERS; QUANTUM TUNNELING EFFECTS; SCHOTTKY JUNCTIONS;

ELECTRON TUNNELING; ETCHING; NEGATIVE RESISTANCE; PLATINUM; POROUS SILICON; SILICIDES; SILICON;

CRYSTAL ATOMIC STRUCTURE;

PLATINUM; SILICON;

ARTICLE; ATOMIC FORCE MICROSCOPY; CHEMISTRY; NANOTECHNOLOGY; PARTICLE SIZE; POROSITY; QUANTUM THEORY; SEMICONDUCTOR;

MICROSCOPY, ATOMIC FORCE; NANOTECHNOLOGY; PARTICLE SIZE; PLATINUM; POROSITY; QUANTUM THEORY; SEMICONDUCTORS; SILICON;

EID: 77950223589     PISSN: 14248220     EISSN: None     Source Type: Journal    
DOI: 10.3390/s100201012     Document Type: Article

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