One order of magnitude increase in quantum efficiency of PtSi/Si IR detectors

Proceedings of the International Conference on Microelectronics, ICM

Volumn 2000-October, Issue , 2000, Pages 321-323

  Raissi, F ^a   Far, M M ^b  

^a K N TOOSI UNIVERSITY OF TECHNOLOGY   (Iran)

^b Institute of Chemical Science and Technology   (Iran)

Author keywords

IR detection; PtSi Si; Quantum efficiency; Schottky barrier

Indexed keywords

EFFICIENCY; INFRARED DETECTORS; MICROELECTRONICS; PORE SIZE; POROUS SILICON; SCHOTTKY BARRIER DIODES; SILICON DETECTORS;

ORDERS OF MAGNITUDE; P-TYPE SILICON; PORE SURFACE; PTSI/SI; SCHOTTKY BARRIERS; SCHOTTKY DETECTORS; SCHOTTKY DIODES;

QUANTUM EFFICIENCY;

EID: 84979518925     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/ICM.2000.916469     Document Type: Conference Paper

References (6)

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