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Volumn 10, Issue 3, 2000, Pages 421-429

Behavior of bulk micromachined silicon flow sensor in the negative differential resistance regime

Author keywords

[No Author keywords available]

Indexed keywords

FLOW MEASUREMENT; MICROMACHINING;

EID: 0034276172     PISSN: 09601317     EISSN: None     Source Type: Journal    
DOI: 10.1088/0960-1317/10/3/318     Document Type: Article
Times cited : (10)

References (6)
  • 2
    • 0033887790 scopus 로고    scopus 로고
    • A pulsed-mode micromachined flow sensor with temperature drift compensation
    • Okulan N, Henderson H T and Ahn C H 2000 A pulsed-mode micromachined flow sensor with temperature drift compensation IEEE Trans. Electron Devices 47 340-7
    • (2000) IEEE Trans. Electron Devices , vol.47 , pp. 340-347
    • Okulan, N.1    Henderson, H.T.2    Ahn, C.H.3
  • 3
    • 0030156755 scopus 로고    scopus 로고
    • Structural design and characteristics of a thermally isolated, sensitivity-enhanced, bulk-micromachined, silicon flow sensor
    • Betzner T M et al 1996 Structural design and characteristics of a thermally isolated, sensitivity-enhanced, bulk-micromachined, silicon flow sensor J. Micromech. Microeng. 6 217-27
    • (1996) J. Micromech. Microeng. , vol.6 , pp. 217-227
    • Betzner, T.M.1
  • 5
    • 0004641996 scopus 로고    scopus 로고
    • Die temperaturabhängigkeit der elektronischen kenngrößen des eigenleitenden siliciums
    • Wasserrab Th 1997 Die Temperaturabhängigkeit der elektronischen Kenngrößen des eigenleitenden Siliciums Z. Naturf. a 32 746-9
    • (1997) Z. Naturf. A , vol.32 , pp. 746-749
    • Wasserrab, Th.1
  • 6
    • 0020087475 scopus 로고
    • Electron and hole mobilities in silicon as a function of concentration and temperature
    • Arora N D et al 1982 Electron and hole mobilities in silicon as a function of concentration and temperature IEEE Trans. Electron Devices 29 292-5
    • (1982) IEEE Trans. Electron Devices , vol.29 , pp. 292-295
    • Arora, N.D.1


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.