An infrared sensitive negative-differential-resistance device for high-temperature application

International Journal of Infrared and Millimeter Waves

Volumn 21, Issue 2, 2000, Pages 255-260

  Jiang, Yanfeng ^a   Li, Siyuan ^a   Liu, Su ^a   Ma, Zhonghua ^a  

^a LANZHOU UNIVERSITY   (China)

Author keywords

Ferroelectric material; Infrared; Negative differential resistance

Indexed keywords

EID: 0042226440     PISSN: 01959271     EISSN: None     Source Type: Journal    
DOI: 10.1023/A:1006605002098     Document Type: Article

References (9)

1. F. Capasso, S. Sen, A.C. Gossard, et al. IEEE Electron Device Lett. 7, 573(1986)
2. T.P.E. Broekaert, W. Lee, and G.C. Fonstad, Appl.Phys.Lett. 53.1545 (1988)
3. Kuen-Hsien Wu, Yean-Kuen Fang, et al. Appl.Phys.Lett.72.3017(1998)
4. M. Okuyama, H. Seto, M. Kojima, et al. J.Appl.Phys. 21.225(1981)
5. R. Takayama, Y. Tomita, K. Iijima, and I.Ueda, J.Appl.Phys. 61, 411 (1987)
6. F.Y. Chen, Y.K. Fang, C.Y. Shu, and J.R. Chen, IEEE ED. 43,2019 (1996)
7. F.Y. Chen, Y.K. Fang, C.Y. Shu, and J.R. Chen, IEEE ED. 44,937(1997)
8. H. Matsuura, T. Okuno, H. Okushi, and K. Tanaka, J.Appl.Phys. 55,912 (1984)
9. M.I. Chaudhry, IEEE Electron Device Lett. 12,670(1991)