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Volumn 51, Issue 3, 2004, Pages 339-344
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Single-Electron Effect in PtSi/Porous Si Schottky Junctions
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Author keywords
Coulomb blockade; IR detectors; Single electron effect
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Indexed keywords
CAPACITANCE;
COULOMB BLOCKADE;
CURRENT VOLTAGE CHARACTERISTICS;
ELECTRIC BREAKDOWN;
ELECTRON TUNNELING;
ELECTRONS;
INFRARED DETECTORS;
INFRARED RADIATION;
POROUS SILICON;
SCHOTTKY BARRIER DIODES;
SILICON WAFERS;
THRESHOLD VOLTAGE;
INFRARED WAVELENGTHS;
SINGLE-ELECTRON EFFECTS;
SEMICONDUCTOR JUNCTIONS;
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EID: 1642319482
PISSN: 00189383
EISSN: None
Source Type: Journal
DOI: 10.1109/TED.2003.822471 Document Type: Article |
Times cited : (25)
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References (8)
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