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PPC2009 - 17th IEEE International Pulsed Power Conference

Volumn , Issue , 2009, Pages 260-263

Wide-pulse evaluation of 0.5 cm2 silicon carbide SGTO

(6) O'Brien, Heather a Ogunniyi, Aderinto a Scozzie, Charles J a Shaheen, William b Agarwal, Anant c Temple, Victor d

a U S ARMY RESEARCH LABORATORY (United States)

b Berkeley Research Associates (United States)

c Arkansas Power Electronics International Inc (United States)

d Silicon Power Corp (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CURRENT LEVELS; CURRENT WAVEFORMS; CURRENT-SHARING; EMITTER AREA; FORWARD VOLTAGE DROPS; HIGH-POWER PULSE; PARALLEL SWITCH; PEAK CURRENTS; SHAPED PULSE; SILICON-BASED; SINGLE SHOTS;

MULTICHIP MODULES; PULSE CIRCUITS;

SILICON CARBIDE;

EID: 77950002970 PISSN: None EISSN: None Source Type: Conference Proceeding
DOI: 10.1109/PPC.2009.5386306 Document Type: Conference Paper

Times cited : (10)

References (8)

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2
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- Evaluation of Si and SiC SGTOs for High-Action Army Applications
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- O'Brien, H.¹ Shaheen, W.² Chiscop, V.³ Scozzie, C.J.⁴ Koebke, M.G.⁵

3
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- SiC Physical & Electronic Properties, Cree, Inc., Durham, NC, [Online], 2009 [cited June 2009], Available: http ://www.cree.com Directory : products File: sic-sub-prop.asp
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4
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- Prospects of Bipolar Power Devices in Silicon Carbide
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8
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- Evaluation of 4 mm x 4 mm Silicon Carbide Thyristors
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- H. O'Brien, W. Shaheen, S. B. Bayne, "Evaluation of 4 mm x 4 mm Silicon Carbide Thyristors," IEEE Trans. Dielectrics and Electrical Insulation, vol. 14, no. 4, pp. 986-993, Aug. 2007.
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* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.