Evaluation of 4 mm × 4 mm silicon carbide thyristors

IEEE Transactions on Dielectrics and Electrical Insulation

Volumn 14, Issue 4, 2007, Pages 986-993

  O'Brien, Heather ^a   Shaheen, William ^a   Bayne, Stephen B ^a  

^a U S ARMY RESEARCH LABORATORY   (United States)

Author keywords

Power semiconductor switches; Pulse power system switches; Pulse shaping circuits; Resistance heating; Semiconductor device breakdown; Semiconductor materials; Semiconductor switches; Thyristors

Indexed keywords

ELECTRIC BREAKDOWN; HIGH TEMPERATURE EFFECTS; PULSE SHAPING CIRCUITS; SEMICONDUCTOR MATERIALS; SEMICONDUCTOR SWITCHES; SILICON CARBIDE; SWITCHING;

POWER SEMICONDUCTOR SWITCHES; PULSE POWER SYSTEM SWITCHES; RESISTANCE HEATING; SEMICONDUCTOR DEVICE BREAKDOWN;

THYRISTORS;

EID: 34547790730     PISSN: 10709878     EISSN: None     Source Type: Journal    
DOI: 10.1109/TDEI.2007.4286538     Document Type: Conference Paper

References (11)

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