Silicon carbide hot-wall epitaxy for large-area, high-voltage devices

Materials Research Society Symposium Proceedings

Volumn 1069, Issue , 2008, Pages 115-121

  O'Loughlin, M J ^a   Irvine, K G ^a   Sumakeris, J J ^a   Armentrout, M H ^a   Hull, B A ^a   Hallin, C ^a   Burk Jr , A A ^a  

^a Arkansas Power Electronics International Inc   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

DEFECTS; OPTIMIZATION; POWER SEMICONDUCTOR DIODES; SCHOTTKY BARRIER DIODES; SILICON CARBIDE; SILICON WAFERS; SUBSTRATES;

EPITAXIAL REACTORS; HIGH VOLTAGE DEVICES; JUNCTION BARRIER SCHOTTKY DIODES; LOW DEFECT DENSITIES; MORPHOLOGICAL DEFECTS; SILICON CARBIDES (SIC); THICK EPITAXIAL LAYERS; THICKNESS UNIFORMITY;

EPITAXIAL GROWTH;

EID: 55849152367     PISSN: 02729172     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1557/proc-1069-d04-01     Document Type: Conference Paper

References (7)

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3. B. Hull, J. Sumakeris, M. O'Loughlin, Q. Zhang, J. Richmond, A. Powell, M. Paisley, V. Tsvetkov, A. Hefner, and A. Rivera, presented at the 2007 International Conference on Silicon Carbide and Related Materials, Otsu, Japan, 2007 (to be published).
4. M. O'Loughlin and J. Sumakeris, U.S. Patent No. 7 230 274 (12 June, 2007)
5. J. Sumakeris, M. Paisley, and M. O'Loughlin, U.S. Patent No. 7 118 781 (10 October, 2006)
6. Candela CS2, KLA-Tencor, Inc., Freemont, CA, USA.
7. R. Leonard, Y. Khlebnikov, A. Powell, C. Basceri, M. Brady, I. Khlebnikov, J. Jenny, D. Malta, M. Paisley, V. Tsvetkov, R. Zilli, E. Deyneka, H. Hobgood, and C. Carter, presented at the 2007 International Conference on Silicon Carbide and Related Materials, Otsu, Japan, 2007 (to be published).