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Volumn 45, Issue 1, 2009, Pages 402-406

Evaluation of Si and SiC SGTOs for high-action Army applications

Author keywords

Power semiconductor switches; Pulse shaping circuits; Thyristors

Indexed keywords

PULSE SHAPING CIRCUITS; RESEARCH LABORATORIES; SILICON CARBIDE; THYRISTORS; WIDE BAND GAP SEMICONDUCTORS;

EID: 57849136961     PISSN: 00189464     EISSN: None     Source Type: Journal    
DOI: 10.1109/TMAG.2008.2008549     Document Type: Article
Times cited : (17)

References (10)
  • 5
    • 59849097943 scopus 로고    scopus 로고
    • Solidtron CCSTA14N40 N-type
    • Malvern, PA: Silicon Power Corp
    • K. Brandmier, "Solidtron CCSTA14N40 N-type," in ThinPak Preliminary Data Sheet. Malvern, PA: Silicon Power Corp., 2005.
    • (2005) ThinPak Preliminary Data Sheet
    • Brandmier, K.1
  • 6
    • 45149122061 scopus 로고    scopus 로고
    • Pulse power switching of a 4 mm × 4 mm SiC thyristor
    • Jun
    • H. O'Brien, W. Shaheen, and S. B. Bayne, "Pulse power switching of a 4 mm × 4 mm SiC thyristor," in Proc. IEEE Pulsed Power Conf, Jun. 2005, pp. 896-899.
    • (2005) Proc. IEEE Pulsed Power Conf , pp. 896-899
    • O'Brien, H.1    Shaheen, W.2    Bayne, S.B.3
  • 7
  • 8
    • 59849086277 scopus 로고    scopus 로고
    • Silicon Carbide Substrates: Product Specifications, Cree, Inc., Durham, NC, 2005, Version MAT-CATALOG. 00D, Revised Jan. 2005.
    • "Silicon Carbide Substrates: Product Specifications," Cree, Inc., Durham, NC, 2005, Version MAT-CATALOG. 00D, Revised Jan. 2005.
  • 10
    • 34547790730 scopus 로고    scopus 로고
    • Evaluation of 4 mm × 4 mm silicon carbide thyristors
    • Aug
    • H. O'Brien, W. Shaheen, and S. B. Bayne, "Evaluation of 4 mm × 4 mm silicon carbide thyristors," IEEE Trans. Dielectr. Elect. Insul., vol. 14, no. 4, pp. 986-993, Aug. 2007.
    • (2007) IEEE Trans. Dielectr. Elect. Insul , vol.14 , Issue.4 , pp. 986-993
    • O'Brien, H.1    Shaheen, W.2    Bayne, S.B.3


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.