Prospects of bipolar power devices in silicon carbide

IECON Proceedings (Industrial Electronics Conference)

Volumn , Issue , 2008, Pages 2879-2884

  Agarwal, Anant ^a   Zhang, Qingchun ^a   Burk, Al ^a   Callanan, Robert ^a   Mazumder, Sudip ^b  

^a Arkansas Power Electronics International Inc   (United States)

^b University of Illinois at Chicago   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

DC GENERATORS; ELECTRIC EQUIPMENT; ELECTRIC POWER TRANSMISSION NETWORKS; INDUSTRIAL ELECTRONICS; MOSFET DEVICES; POWER TRANSMISSION; SCHOTTKY BARRIER DIODES; SILICON CARBIDE;

BIPOLAR DEVICES; CONDUCTIVITY MODULATIONS; CURRENT GAINS; CURRENT SITUATIONS; DEVICE DESIGNS; DEVICE PROCESSING; FUTURE TRENDS; GATE DRIVE CIRCUITS; GATE DRIVERS; HIGH CURRENTS; HIGH TEMPERATURES; HIGH-POWER PULSE; HIGH-POWER SYSTEMS; HIGH-VOLTAGE CONVERTERS; MOSFETS; ON RESISTANCES; ON-STATE VOLTAGE DROPS; POWER DEVICES; POWER SWITCHES; POWER SYSTEMS; SCHOTTKY DIODES; SIC MATERIALS; UNIPOLAR DEVICES;

SEMICONDUCTING SILICON COMPOUNDS;

EID: 63149106106     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/IECON.2008.4758416     Document Type: Conference Paper

References (14)

1. J. A. Cooper and A. K. Agarwal, "SiC power switching devices - the second electronics revolution?", Proc. IEEE, 90, 956-968 (2002).
2. 2 4H-SiC power DMOSFETs", IEEE Electron Device Lett., 25, 556-558 (2004).
3. S. E. Saddow, A. K. Agarwal, Advances in Silicon Carbide Processing and Applications, Artech House Publishers, July 2004.
4. C. Jonas, C. Capell, A. Burk, Q. Zhang, R. Callanan, A. Agarwal, Bruce Geil, and Charles Scozzie,"1200 V 4H-SiC Bipolar Junction Transistors with A Record β of 70", Electronic Material Conference 2007, University of Notre Dame, Indiana, USA.
5. A. Agarwal, S. Krishnaswami, J. Richmond, C. Capell, S. Ryu, J. Palmour, B. Geil, D. Katsis, C. Scozzie and R. Stahlbush, "Influence of Basal Plane Dislocation Induced Stacking Faults on the Current Gain in SiC BJTs", Silicon Carbide and Related Materials 2005, 1409-1412, (2005).
6. Q. Zhang, C. Jonas, J. Sumakeris, A. Agarwal, and J. Palmour," 12 kV 4H-SiC p-IGBTs with Record Low Specific On-resistance", Presented at International Conference on Silicon Carbide and Related Materials (ICSCRM), Otsu, Japan, October 14-19,2007.
7. M. Das, Q. Zhang, R. Callanan, C. Capell, J. Clayton, M. Donofrio, Haney, F. Husna, C. Jonas, J. Richmond, and J. J. Sumakeris, "A 13kV 4H-SiC N-Channel IGBT with Low Rdiff,on and Fast Switching", Presented at International Conference on Silicon Carbide and Related Materials (ICSCRM), Otsu, Japan, October 14-19,2007.
8. A. Agarwal, S. Krishnaswami, J. Richmond, C. Capell, S. Ryu, J. Palmour, B. Geil, D. Katsis, C. Scozzie and R. Stahlbush, "Influence of Basal Plane Dislocation Induced Stacking Faults on the Current Gain in SiC BJTs", Silicon Carbide and Related Materials 2005, 1409-1412, (2005).
9. 2; 4H-SiC BJT with a Record High Current Gain of β=70", International Conference on Silicon Carbide and Related Materials, Otsu, Japan, October 14-19, 2007.
10. 2," IEEE Electron Device Letters, 27, pp. 368-370 (2006).
11. Y. Sui, X. Wang, J. A. Cooper, "High-Voltage Self-Aligned p-Channel DMOS-IGBTs in 4H-SiC", IEEE Electron Device Lett., 28, 728-730 (2007).
12. Q. Zhang, C. Jonas, S. Ryu, A. Agarwal and J. Palmour, "Design and fabrications of high voltage IGBTs on 4H-SiC", Proc. of the 18th Inter. Sym. on Power Semi. Dev. & Ics (ISPSD), 285-288 (2006).
13. nd. Ed., John Wiley & Sons Publishers, New York, 1981.
14. Baliga, B. J., Power Semiconductor Devices, PWS Publication Company, Boston, 1995.