About the formation and avoidance of C and N related precipitates during directional solidification of multi-crystalline silicon from contaminated feedstock

Journal of Crystal Growth

Volumn 312, Issue 9, 2010, Pages 1510-1516

  Reimann, C ^a,b   Trempa, M ^a   Friedrich, J ^a,b   Muller G ^a,c  

^a FRAUNHOFER INSTITUTE FOR INTEGRATED SYSTEMS AND DEVICE TECHNOLOGY IISB   (Germany)

^b FRAUNHOFER INSTITUTE FOR SOLAR ENERGY SYSTEMS ISE   (Germany)

^c Crystal Consulting   (Germany)

Author keywords

A1. Directional solidification; A1. Impurities; A1. Mass transfer; A2. Vertical gradient freeze; B2. Multi crystalline silicon; B3. Solar cells

Indexed keywords

A1. DIRECTIONAL SOLIDIFICATION; A1. IMPURITIES; B3.SOLAR CELL; DIRECTIONAL SOLIDIFICATION; MULTI-CRYSTALLINE SILICON; VERTICAL GRADIENT FREEZE;

CONTAMINATION; CRYSTAL IMPURITIES; CRYSTALLINE MATERIALS; CRYSTALLIZATION; FEEDSTOCKS; GRAIN BOUNDARIES; INGOTS; MASS TRANSFER; SILICA; SILICON CARBIDE; SOLAR CELLS; SOLIDIFICATION;

FUSED SILICA;

EID: 77949914241     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jcrysgro.2010.02.003     Document Type: Article

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