Influence of contamination on the electrical activity of crystal defects in silicon

Microelectronic Engineering

Volumn 66, Issue 1-4, 2003, Pages 281-288

  Kittler, Martin ^a   Seifert, Winfried ^a   Knobloch, Klaus ^a  

^a IHP   (Germany)

Author keywords

Dislocations; Electrical activity; Gettering; Passivation; Silicon

Indexed keywords

HYDROGENATION; PASSIVATION; SILICON;

METAL CONTAMINATION;

CRYSTAL DEFECTS;

EID: 0037391794     PISSN: 01679317     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0167-9317(02)00919-X     Document Type: Article

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