Structural and magnetic properties of Co+ implanted n-GaN dilute magnetic semiconductors

Physica B: Condensed Matter

Volumn 405, Issue 9, 2010, Pages 2340-2343

  Husnain, G ^a   Tao, Fa ^a   Yao, Shu De ^a  

^a PEKING UNIVERSITY   (China)

Author keywords

Dilute magnetic semiconductors; GaN film; Ions implantation; Structure

Indexed keywords

AS-GROWN; CHEMICAL VAPOUR DEPOSITION; CRYSTALLINE QUALITY; DILUTE MAGNETIC SEMICONDUCTORS; GAN EPILAYERS; GAN FILM; HIGH-RESOLUTION X-RAY DIFFRACTION; IONS IMPLANTATION; MAGNETIC MEASUREMENTS; MAGNETIZATION CURVES; METAL ORGANIC; RUTHERFORD BACK-SCATTERING SPECTROMETRY; SECONDARY PHASE; STRUCTURAL AND MAGNETIC PROPERTIES; TEMPERATURE DEPENDENCE; XRD;

EPILAYERS; GALLIUM ALLOYS; HYSTERESIS; IONS; MAGNETIC PROPERTIES; MAGNETIC SEMICONDUCTORS; MAGNETISM; ORGANIC CHEMICALS; ORGANOMETALLICS; RUTHERFORD BACKSCATTERING SPECTROSCOPY; SEMICONDUCTING ANTIMONY; X RAY DIFFRACTION; X RAY DIFFRACTION ANALYSIS;

GALLIUM NITRIDE;

EID: 77949914097     PISSN: 09214526     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.physb.2010.02.044     Document Type: Article

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