Manipulation of the crystallinity boundary of pulsed laser deposited high-k HfO2-TiO2-Y2O3 combinatorial thin films

Journal of Applied Physics

Volumn 107, Issue 5, 2010, Pages

  Klamo, J L ^a   Schenck, P K ^a   Burke, P G ^a   Chang, K S ^a   Green, M L ^a  

^a NATIONAL INSTITUTE OF STANDARDS AND TECHNOLOGY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

BOUNDARY LINES; COMBINATORIAL LIBRARY; COMBINATORIAL THIN FILMS; CRYSTALLINE PHASIS; CRYSTALLINITIES; DIELECTRIC CONSTANTS; EFFECTIVE TOOL; ELECTRICAL MEASUREMENT; HIGH-K DIELECTRIC; HIGH-K HFO; HIGH-THROUGHPUT; MICROSTRUCTURAL PROPERTIES; PULSED LASER; SPACE PARAMETERS; SPECTROSCOPIC REFLECTOMETRY; SUBSTRATE TEMPERATURE; TIO;

HAFNIUM COMPOUNDS; PULSED LASER DEPOSITION; X RAY DIFFRACTION;

PULSED LASERS;

EID: 77949755020     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.3294607     Document Type: Article

References (19)

1. J. J. Hanak, J. Mater. Sci. 5, 964 (1970).
2. X. D. Xiang, X. Sun, G. Briceo, Y. Lou, K.-A. Wang, H. Chang, W. G. Wallace-Freedman, S.-W. Chen, and P. G. Schultz, Science 268, 1738 (1995).
3. N. D. Bassim, P. K. Schenck, M. Otani, and H. Oguchi, Rev. Sci. Instrum. 78, 072203 (2007).
4. H. M. Christen, S. D. Silliman, and K. S. Harshavardham, Rev. Sci. Instrum. 72, 2673 (2001).
5. G. D. Wilk, R. M. Wallace, and J. M. Anthony, J. Appl. Phys. 89, 5243 (2001).
6. K. Kita, K. Kyuno, and A. Toriumi, Appl. Phys. Lett. 86, 102906 (2005).
7. M. Komatsu, R. Yasuhara, H. Takahashi, S. Toyoda, H. Kumigashira, M. Oshima, D. Kukuruznyak, and T. Chikyow, Appl. Phys. Lett. 89, 172107 (2006).
8. P. K. Schenck, J. L. Klamo, N. D. Bassim, P. G. Burke, and M. L. Green, Thin Solid Films 517, 691 (2008).
9. K. L. Saenger, in Pulsed Laser Deposition of Thin Films, edited by, D. B. Chrisey, and, G. K. Hubler, (Wiley, New York, 1994).
10. Certain commercial equipment, instruments, or materials are identified in this document. Such identification does not imply recommendation or endorsement by the National Institute of Standards and Technology, nor does it imply that the products identified are necessarily the best available for the purpose.
11. P. K. Schenck, D. L. Kaiser, and A. V. Davydov, Appl. Surf. Sci. 223, 200 (2004).
12. P. K. Schenck, N. D. Bassim, M. Otani, H. Oguchi, and M. L. Green, Appl. Surf. Sci. 254, 781 (2007).
13. K. Honda, A. Sakai, M. Sakashita, H. Ikeda, S. Zaima, Y. Yasuda, Jpn. J. Appl. Phys., Part 1 43, 1571 (2004).
14. D. Triyoso, R. Hegde, S. Zollner, M. Ramon, S. Kalpat, R. Gregory, X.-D. Wang, J. Jiang, M. Raymond, R. Rai, D. Werho, D. Roan, B. White, Jr., and P. Tobin, J. Appl. Phys. 98, 054104 (2005).
15. M. D. Stamate, Appl. Surf. Sci. 218, 318 (2003).
16. G. Alarcón-Flores, M. Aguilar-Frutis, C. Falcony, M. García-Hipolito, J. J. Araiza-Ibarra, and H. J. Herrera-Suárez, J. Vac. Sci. Technol. B 24, 1873 (2006).
17. M. Subramanian, G. Aravamudan, and G. V. Subba Rao, Prog. Solid State Chem. 15, 55 (1983).
18. M. Glerup, O. F. Nielsen, and F. W. Poulsen, J. Solid State Chem. 160, 25 (2001).
19. C. Durand, C. Dubourdieu, C. Valĺe, E. Gautier, F. Ducroquet, D. Jalabert, H. Roussel, M. Bonvalot, and O. Joubert, J. Electrochem. Soc. 152, F217 (2005).