Low interface states and high dielectric constant y2O 3 films on Si substrates

Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures

Volumn 24, Issue 4, 2006, Pages 1873-1877

  Alarcon Flores G ^a   Aguilar Frutis, M ^a   Falcony, C ^b   Garcia Hipolito M ^c   Araiza Ibarra, J J ^d   Herrera Suarez H J ^a  

^a INSTITUTO POLITÉCNICO NACIONAL   (Mexico)

^b DEPARTAMENTO DE FÍSICA   (Mexico)

^c UNIVERSIDAD NACIONAL AUTÓNOMA DE MÉXICO   (Mexico)

^d UNIVERSIDAD AUTÓNOMA DE ZACATECAS   (Mexico)

Author keywords

[No Author keywords available]

Indexed keywords

AMMONIUM COMPOUNDS; DEPOSITION; ELECTRIC PROPERTIES; HEAT TREATMENT; NITROGEN COMPOUNDS; PERMITTIVITY; PYROLYSIS; REFRACTIVE INDEX; SILICON; SUBSTRATES; YTTRIUM COMPOUNDS;

N,N-DIMETHYLFORMAMIDE; SPRAY PYROLYSIS; YTTRIUM ACETILACETONATE; YTTRIUM OXIDE;

THIN FILMS;

EID: 33746539628     PISSN: 10711023     EISSN: None     Source Type: Journal    
DOI: 10.1116/1.2214710     Document Type: Article

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